The 83rd JSAP Autumn Meeting 2022

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[23p-C200-1~11] 15.4 III-V-group nitride crystals

Fri. Sep 23, 2022 1:30 PM - 4:30 PM C200 (C200)

Ryota Ishii(Kyoto Univ.), Jun Tatebayashi(Osaka Univ.)

3:30 PM - 3:45 PM

△ [23p-C200-8] Hydrogen Iodide (HI) Neutral Beam Etching for InGaN/GaN Micro-LED

〇(M2)Takahiro Ishihara1, Ohori Daisuke1, Xuelun Wang3,4, Kazuhiko Endo3, Natori Nobuhiro5, Tanimoto Yousuke5, Yiming Li6, Seiji Samukawa6,1,2 (1.IFS, Tohoku Univ., 2.AIMR, Tohoku Univ., 3.AIST., 4.IMaSS, Nagoya Univ., 5.Showa Denko K.K., 6.NYCU)

Keywords:micro LED, neutral beam etching, InGaN/GaN