Oral presentation

13 Semiconductors » 13.7 Compound and power devices, process technology and characterization

[22a-E302-1~12] 13.7 Compound and power devices, process technology and characterization

Tue. Mar 22, 2022 9:00 AM - 12:15 PM E302 (E302)

Kozo Makiyama(Sumitomo Electric Industries, Ltd.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[22a-E302-1] Device Simulation of Output Admittance of HEMT’s

〇Koichi Fukuda¹, Junichi Hattori¹, Hidehiro Asai¹, Tsutomu Ikegami¹, Toshihide Ide¹, Mitsuaki Shimizu¹ (1.AIST)

9:15 AM - 9:30 AM

[22a-E302-2] 1/f noise measurement on AlGaN/GaN HEMT TLM

〇koshi Katakura¹, Takuya Hoshii¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui², Kuniyuki Kakushima¹ (1.Tokyo Tech, 2.Tokyo Tech IIR)

9:30 AM - 9:45 AM

[22a-E302-3] Buffer Layer Impurity Dependence of Current Collapse of AlGaN/GaN HEMTs Fabricated on GaN Substrates

〇Hidemasa Takahashi¹, Yuji Ando¹, Akio Wakejima³, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.NITech)

9:45 AM - 10:00 AM

[22a-E302-4] Dependence of 2DEG mobility on carrier concentration in InAlN/AlN/GaN structures

〇(M1)Yuta Komori¹, Kazuo Tsutsui¹, Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kiyotaka Miyano², Takashi Yoda², Ichirou Mizushima², Masayuki Tsukui² (1.Tokyo Tech, 2.NuFlare Technology)

10:00 AM - 10:15 AM

[22a-E302-5] Characterization of parallel conduction for the AlGaN/GaN MIS-HEMTs

〇Ryota Ochi¹, Tamotsu Hashizume¹, Taketomo Sato¹ (1.RCIQE)

10:15 AM - 10:30 AM

△ [22a-E302-6] Contact resistance improvement and modeling of stripe-recessed ohmic contact for InAlGaN/AlN/GaN HEMTs

〇Yusuke Kumazaki¹, Shiro Ozaki¹, Naoya Okamoto¹, Naoki Hara¹, Toshihiro Ohki¹ (1.Fujitsu)

10:45 AM - 11:00 AM

△ [22a-E302-7] Multi-probe Hall measurements of AlGaN/GaN heterostructures under Ohmic-metals

〇kazuya Uryu^1,2, Shota Kiuch¹, Taku Sato², Toshi-kazu Suzuki¹ (1.JAIST, 2.ATL)

11:00 AM - 11:15 AM

△ [22a-E302-8] Device fabrication and characterization of AlGaInN/GaN HEMTs on single-crystal AlN substrate

〇(M1)Sakura Tanaka¹, Aiyoshi Inoue¹, Tomoyuki Kawaide¹, Takashi Egawa¹, Makoto Miyoshi¹ (1.Nagoya Inst. Tech.)

11:15 AM - 11:30 AM

[22a-E302-9] Isolation of N-polar GaN HEMT by TMAH solution

〇Takahiro Arai¹, Tomoya Aota¹, Isao Makabe², Ken Nakata², Takahiro Gotow¹, Yasuyuki Miyamoto¹ (1.Tokyo Tech, 2.Sumitomo Electric Industries, Ltd)

11:30 AM - 11:45 AM

[22a-E302-10] Fabrication and Characterization of N-Polar AlGaN/AlN High Electron Mobility Transistors

〇Shunsuke Matsuda¹, Daisuke Inahara¹, Wataru Matsumura¹, Lu You¹, Kazuya Ataka¹, Kouki Hanasaku¹, Yongzhao Yao², Yukari Ishikawa², Satoshi Kurai¹, Narihito Okada¹, Yoichi Yamada¹, Kazuyuki Tadatomo¹ (1.Grad. School of Sci. & Tech. for Innovation, Yamaguchi Univ., 2.JFCC)

11:45 AM - 12:00 PM

△ [22a-E302-11] The increase of heat resistivity of N-polar GaN/AlGaN heterostructure transferred on Si substrate with AlN anti-diffusion layer inserted to interface of direct bonding

〇Yuki Yoshiya¹, Takuya Hoshi¹, Hiroki Sugiyama¹, Fumito Nakajima¹, Hideaki Matsuzaki¹ (1.NTT Device Technology Labs)

12:00 PM - 12:15 PM

[22a-E302-12] Electrical characteristics of Si-doped GaN films deposited by sputtering on N-polar semi-insulating GaN substrates

〇Shinji Yamada¹, Taehui Lee¹, Masanori Shirai², Hiroki Kobayashi², Ryuichiro Kamimura², Manabu Arai¹, Tetsu Kachi¹, Jun Suda¹ (1.Nagoya Univ., 2.ULVAC)

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