[22a-E202-1~7] 15.4 III-V-group nitride crystals

[22a-E202-5] Growth of GaN films on ScAlMgO₄ Substrate by HVPE (1) Simultaneous growth of multiple Substrates

〇Kazuyuki Tadatomo¹, Tuguo Fukuda³, Ryo Inomoto¹, Shinichi Seiryu² (1.Creators of New Value, 2.OTASJAPAN, 3.Fukuda Crystal)

Keywords:HVPE, GaN, SAM

Thick GaN films were grown in a large 6-inch HVPE furnace with five SAM substrates arranged to simulate a large area of 6-inch diameter. Five transparent GaN substrates were obtained and all 5 SAM substrates were spontaneously separated. 4 of the SAM substrates were recovered without cracking and could be reused by CMP. The area of the five substrates was pseudo-similar to a large area of 6 inches in diameter, demonstrating that the SAM substrate is a promising substrate for realizing long-diameter GaN growth with high yields in the future.