[22a-E203-1~11] 17.3 Layered materials

▲ [22a-E203-2] High temperature stability of MoS₂ probed by combining thermal desorption spectroscopy and atomic layer deposition

〇Li Shuhong^1,2, Tomonori Nishimura², Mina Maruyama¹, Susumu Okada¹, Kosuke Nagashio² (1.Univ. of Tsukuba, 2.Univ. of Tokyo)

Keywords:Molybdenum disulfide, Thermal Desorption Spectroscopy, Atomic Layer Deposition

Probing defects in MoS₂ plays an important role forward to a better understanding of defect nature. However, the strict requirement of substrate for high-resolution characterization as STM is deviating from the standard device circumstances. Development of a method to gauge the defects of MoS₂ on SiO₂ substrate is highly desired. In this research, we demonstrated a method by combining thermal desorption spectroscopy and atomic layer deposition to detect the defect evolution of MoS₂/SiO₂ under the UHV annealing process, which surprisingly reveals good thermal stability of MoS₂ .