[22a-E302-1~12] 13.7 Compound and power devices, process technology and characterization

[22a-E302-1] Device Simulation of Output Admittance of HEMT’s

〇Koichi Fukuda¹, Junichi Hattori¹, Hidehiro Asai¹, Tsutomu Ikegami¹, Toshihide Ide¹, Mitsuaki Shimizu¹ (1.AIST)

Keywords:GaN HEMT, device simulation, trap level

Stable solutions of GaN HEMT output admittance deice simulation are obtained by coupling deep level trap rate equations.