The 69th JSAP Spring Meeting 2022

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[22p-E204-1~13] 6.3 Oxide electronics

Tue. Mar 22, 2022 1:30 PM - 5:00 PM E204 (E204)

Takahisa Tanaka(Univ. Tokyo), Daichi Oka(Tohoku Univ. )

2:00 PM - 2:15 PM

[22p-E204-3] Orthorhombic distortion and optoelectronic transport properties of rutile Nb:TiO2 epitaxial films grown on M-plane sapphire substrates

〇(D)Binjie Chen1, Yuqiao Zhang2, Hiromichi Ohta3 (1.IST-Hokkaido U., 2.Jiangsu U., 3.RIES-Hokkaido U.)

Keywords:Epitaxial film, Titanium dioxide, Lattice distortion

Rutile and anatase TiO2 are known as the important active materials of photocatalyst and the transparent electrode. However, there are several differences between them: the bandgap of the anatase phase is larger than that of the rutile phase, while the electron mobility of the anatase phase is higher than that of the rutile phase, due to the difference in the electronic structure. It is known that the crystal structure of TiO2 film can be controlled by changing the substrate crystal; anatase phase is grown on (001) LaAlO3 substrate and rutile phase is grown on sapphire substrate, probably due to the lattice matching. Since the electronic structure is determined by the crystal structure, adding lattice distortion is commonly used to modulate the electronic structure of a material. In this study, we focus on the modulation of the optoelectronic properties of rutile TiO2 epitaxial films by introducing orthorhombic lattice distortion using an anisotropic in-plane lattice of M-plane sapphire substrate.