[22p-E302-1~15] CS.9 Code-sharing Session of 13.7 & 15.6

[22p-E302-10] 875 MW/cm² 2568 V 0.68A/mm NO₂-Doped Diamond MOSFETs

Saha Niloy Chandra¹, Seong-Woo Kim², Toshiyuki Oishi¹, 〇Makoto Kasu¹ (1.Saga Univ., 2.Adamant Namiki Precision Jewel Co., Ltd.)

Keywords:diamond, FET

In this study, NO₂ doped diamond MOSFET is fabricated on 200-hour chemical mechanical planarized (CMP) heteroepitaxial diamond substrate, and MOSFETs exhibit a high available output power of 875 MW/cm² and volatge (2568V).