[22p-E302-1~15] CS.9 Code-sharing Session of 13.7 & 15.6

[22p-E302-11] Prediction of Stress Distribution and On-resistance of Si Trench MOSFET using Multi-Scale Stress Analysis

〇Kazuyuki Ito¹, Tatsuhiro Oda¹, Takuo Kikuchi¹, Yoshiyuki Kitahara¹, Hidehiko Yabuhara¹, Toshifumi Nishiguchi², Hiroaki Katou², Saya Shimomura², Tatsuya Nishiwaki² (1.Toshiba, 2.Toshiba Electronic Devices & Storage)

Keywords:power semiconductor, stress, on-resistance