[22p-E302-1~15] CS.9 Code-sharing Session of 13.7 & 15.6

△ [22p-E302-14] Analysis of conduction mechanism in 4H-SiC Schottky pn diode

〇(B)Kaito Mori¹, Ryo Kamewada¹, Noriyuki Iwamuro¹, Hiroshi Yano¹ (1.Univ. of Tsukuba)

Keywords:SPND, Space-charge-limited current, Device simulation

SiC-SPND is a diode with Schottky and pn junctions connected in series, and fast switching and low on-resistance properties were reported. However, we have revealed that on-resistance of SiC-SPND is higher than that of SBD, which is due to low carrier density of the drift layer. In this study, we elucidated the conduction mechanism. The current in SiC-SPND is limited by the space charge in the drift layer, making it easier to increase the on-resistance of devices with high breakdown voltage.