[23a-F408-1~9] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[23a-F408-7] Orientation controlled chalcogenide phase-change material thin films

〇Yuta Saito¹, Shogo Hatayama¹, Misako Morota¹ (1.AIST D-Tech)

Keywords:phase-change materials, non-volatile memory, chalcogenides

Chalcogenide-based phase-change materials represented by Ge-Sb-Te have been used for the non-volatile memory, where data recording relied on the electrical resistance contrast between amorphous and crystalline phases. In order to improve the device performance, such as low-power consumption and high-thermal stability, a development of new materials has been extensively studied. Many phase-change materials are known to show a layered crystal structure. In this study, the most typical phase-change materials including Ge-Sb-Te, GeTe, and Sb₂Te₃ are discussed in terms of a crystal orientation-controlled growth technique.