[23p-E102-1~14] FS.1 Focused Session "AI Electronics"

△ [23p-E102-4] Examination of reservoir computing using Ferroelectric MFM capacitors and impact of operation voltage

〇Eishin Nako¹, Kasidit Toprasertpong¹, Zeyu Wang¹, Ryosho Nakane¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. Tokyo)

Keywords:reservoir computing, Ferroelectric MFM capacitor

Reservoir computing using Ferroelectric MFM capacitors is demonstrated and the effect of operating voltage on the performance is investigated. It was found that the hysteresis of ferroelectrics contributes to the performance of reservoir computing because the performance of reservoir computing is greatly improved at the voltage at which the spontaneous polarization switches.