Analysis of phonon transport processes in In<sub>0.05</sub>Ga<sub>0.95</sub>N/GaN heterostructures by simultaneous two-wavelength laser irradiation

Tomoya Nakayama, Kotaro Ito, Bei Ma, Daisuke Iida, Kazuhiro Ohkawa, Yoshihiro Ishitani, Tatsuya Asaji, Mohammed Najimi

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[23p-E202-1~14] 15.4 III-V-group nitride crystals

Wed. Mar 23, 2022 2:15 PM - 6:15 PM E202 (E202)

Kazunobu Kojima(Osaka Univ.), Ryota Ishii(Kyoto Univ.), Hideaki Murotani(Tokuyama College)

2:45 PM - 3:00 PM

[23p-E202-3] Analysis of phonon transport processes in In_0.05Ga_0.95N/GaN heterostructures by simultaneous two-wavelength laser irradiation

〇(M1)Tomoya Nakayama¹, Kotaro Ito¹, Bei Ma¹, Daisuke Iida², Kazuhiro Ohkawa², Yoshihiro Ishitani¹, Tatsuya Asaji¹, Mohammed Najimi² (1.Chiba Univ., 2.Abdullah Univ.)

Keywords:phonon

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Presentation information

[23p-E202-1~14] 15.4 III-V-group nitride crystals

[23p-E202-3] Analysis of phonon transport processes in In0.05Ga0.95N/GaN heterostructures by simultaneous two-wavelength laser irradiation

[23p-E202-3] Analysis of phonon transport processes in In_0.05Ga_0.95N/GaN heterostructures by simultaneous two-wavelength laser irradiation