[23p-E302-1~18] CS.9 Code-sharing Session of 13.7 & 15.6

[23p-E302-9] Increase of reverse leakage current at GaN p-n junctions induced by forward current stress

〇Tetsuo Narita¹, Yoshitaka Nagasato², Masakazu Kanechika³, Takeshi Kondo³, Tsutomu Uesugi³, Kazuyoshi Tomita³, Satoshi Ikeda², Satoshi Yamaguchi¹, Yasuji Kimoto¹, Masayoshi Kosaki⁴, Tohru Oka⁴, Jun Kojima³, Jun Suda³ (1.Toyota CRDL., 2.MIRISE Technologies, 3.Nagoya Univ., 4.Toyoda Gosei)

Keywords:nitride semiconductor, p-n junction, power device

The impacts of reverse and forward bias stress on the electric properties of GaN vertical p-n junctions were studied. The GaN p-n junctions exhibited high stability under continous reverse bias stress. In contrast, a small part of diodes showed the increase of reverse leakage currrent after the continous forward current stress. We found that such a leakage pathway was formed at a specific type of threading dislocations.