[23p-E302-1~18] CS.9 Code-sharing Session of 13.7 & 15.6

△ [23p-E302-10] Electrical Characteristics of p-n Junctions Realized by Distributed-polarization Doping

〇Takeru Kumabe¹, Seiya Kawasaki¹, Hirotaka Watanabe², Yuto Ando², Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4 (1.Grad. Sch. Eng. Nagoya Univ., 2.IMaSS Nagoya Univ., 3.VBL Nagoya Univ., 4.ARC Nagoya Univ.)

Keywords:Gallium nitride, Polarization doping, p-n junction

Distributed polarization doping (DPD) is attracting attention as a novel doping technique for III-nitride semiconductors. However, there is no detailed study on vertical carrier transport and capacitance properties in the DPD layers. This work reports on the detailed analysis of the electrical characteristics of p-n junctions fabricated only by DPD.