The 69th JSAP Spring Meeting 2022

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[24a-E103-1~13] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

Thu. Mar 24, 2022 9:00 AM - 12:30 PM E103 (E103)

Kuniyuki Kakushima(Tokyo Tech), Tatsuya Okada(Univ. of the Ryukyus)

10:00 AM - 10:15 AM

[24a-E103-5] Study of interval time effect to exchange gases in Bosch Process

〇Hiroyuki Tanaka1, Sang-Seok Lee2, Yoshiyuki Nozawa3, Toshihiro Hayami3, Sommawan Khumpuang1,4, Shiro Hara1,4 (1.AIST, 2.Tottori Univ., 3.SPPT, 4.MINIMAL)

Keywords:Bosch, minimal, Deep RIE

In order to perform vertical deep etching in the Bosch process, it is important to keep the balance between passivation and etching. It is desirable that each of these is performed reliably. Therefore, we set an interval between the passivation and the etching process and set up steps so that each process could be performed more steadily, then, a large difference occurred in the etching shape even if the interval time was slightly changed. We report the analysis of these etching mechanisms.