Evaluation of leakage current characteristics of Schottky contacts formed on individual threading dislocations having a screw-component in a free-standing GaN substrate

Takeaki Hamachi, Tetsuya Tohei, Yusuke Hayashi, Shigeyoshi Usami, Masayuki Imanishi, Yusuke Mori, Akira Sakai

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[24a-E202-1~10] 15.4 III-V-group nitride crystals

Thu. Mar 24, 2022 9:15 AM - 12:00 PM E202 (E202)

Narihito Okada(Yamaguchi Univ.), Atsushi Tanaka(Nagoya Univ.)

11:00 AM - 11:15 AM

[24a-E202-7] Evaluation of leakage current characteristics of Schottky contacts formed on individual threading dislocations having a screw-component in a free-standing GaN substrate

〇Takeaki Hamachi¹, Tetsuya Tohei¹, Yusuke Hayashi¹, Shigeyoshi Usami², Masayuki Imanishi², Yusuke Mori², Akira Sakai¹ (1.Grad. Sch. of Eng. Sci., Osaka Univ., 2.Grad. Sch. of Eng., Osaka Univ.)

Keywords:Gallium Nitride, Threading dislocation, Leakage current