Analysis of <em>I-V-T</em> characteristics of a Schottky contact formed on a screw dislocation with b=1<em>c </em>inducing the significant leakage current in a GaN substrate

Takeaki Hamachi, Tetsuya Tohei, Yusuke Hayashi, Shigeyoshi Usami, Masayuki Imanishi, Yusuke Mori, Akira Sakai

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[24a-E202-1~10] 15.4 III-V-group nitride crystals

Thu. Mar 24, 2022 9:15 AM - 12:00 PM E202 (E202)

Narihito Okada(Yamaguchi Univ.), Atsushi Tanaka(Nagoya Univ.)

11:15 AM - 11:30 AM

△ [24a-E202-8] Analysis of I-V-T characteristics of a Schottky contact formed on a screw dislocation with b=1c inducing the significant leakage current in a GaN substrate

〇Takeaki Hamachi¹, Tetsuya Tohei¹, Yusuke Hayashi¹, Shigeyoshi Usami², Masayuki Imanishi², Yusuke Mori², Akira Sakai¹ (1.Grad. Sch. of Eng. Sci., Osaka Univ., 2.Grad. Sch. of Eng., Osaka Univ.)

Keywords:Gallium Nitride, Threading dislocation, Leakage current conduction mechanism