[24a-E302-1~13] CS.9 Code-sharing Session of 13.7 & 15.6

[24a-E302-10] Effects of Substrate Polarity and Acceptor Concentrations on Electrical Properties of p-GaN MOS Devices Fabricated by Mg-Implantation and Ultra-High-Pressure Annealing

〇Hidetoshi Mizobata¹, Yuhei Wada¹, Mikito Nozaki¹, Takuma Kobayashi¹, Takuji Hosoi¹, Tetsu Kachi², Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.Nagoya Univ. IMaSS)

Keywords:Ultra-High-Pressure Annealing (UHPA), Mg-Implantation, N-Polar GaN

The formation of high-quality MOS structures is essential to realize vertical GaN power devices. However, it has been suggested that the oxide/GaN interface have a large amount of defects near the valence band maximum. Previously, we reported that MOS devices on Ga-polar GaN substrates fabricated by Mg-implantation and ultra-high-pressure annealing (UHPA) exhibited very low hole mobility in the vicinity of the MOS interface. In this study, we investigated the effects of substrate polarity (Ga- and N-polar substrates) and acceptor concentrations to improve the performance.