[24p-E304-1~10] Introducing 2D Layered Materials into LSI World!

[24p-E304-4] Synthesis of MoS₂ chemical vapor deposition films by different Mo metal sources

〇Atsushi Ando¹, Toshitaka Kubo¹, Naoya Okada¹, Toshifumi Irisawa¹ (1.AIST)

Keywords:semiconductor, molybdenum disulfide, chemical vapor deposition

The large area growth of uniform molybdenum disulfide (MoS₂) thin films is important for various applications and the two-step chemical vapor deposition (CVD) is one of attractive growth methods, which serves large MoS₂ more than a few hundred micrometers long. In this presentation, we report the effect of different Mo metal sources on the two-step CVD growth of large area MoS₂.