〇Takeo Matsuki¹, Kosuke Nagashio², Hirokazu Fukidome³, Hitoshi Wakabayashi⁴, Takahiro Iizuka⁵, Ryu Hasunuma⁶, Junichi Sone⁷ (1.AIST, 2.The Univ. of Tokyo, 3.Tohoku Univ., 4.Tokyo Inst. of Tech., 5.Hiroshima Univ., 6.Univ. of Tsukuba, 7.JST)

Sessions

Symposium » Introducing 2D Layered Materials into LSI World!

[24p-E304-1~10] Introducing 2D Layered Materials into LSI World!

[24p-E304-1] 2D Materials, Great Expectation for Nanoelectronics Application

[24p-E304-2] 10 years from MoS₂ FET: What has been resolved and what is unresolved?

[24p-E304-3] Issues in growth, formation, and evaluating function developments of 2D materials

[24p-E304-4] Synthesis of MoS₂ chemical vapor deposition films by different Mo metal sources

[24p-E304-5] Electron Doping to MoS₂ by Ultra-thin Film Formation of Phosphine Molecules

[24p-E304-6] Carrier distribution on MoS₂/WS₂ in-plane heterostructures doped carrier

[24p-E304-7] Role of the contact and channel regions in two-dimensional semiconductor transistors

[24p-E304-8] Integration Technologies for 2D Semiconductor Devices

[24p-E304-9] Persectives of device models from circuit design aspects

[24p-E304-10] Introducing 2D Layered Materials into LSI World!

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