[24p-E304-1~10] Introducing 2D Layered Materials into LSI World!

[24p-E304-7] Role of the contact and channel regions in two-dimensional semiconductor transistors

〇Akiko Ueda¹, Ankur Nipane², James T. Teherani² (1.AIST, 2.Columbia University)

Keywords:two-dimensional materials, transition metal dichalcogenide, device simulation

In two-dimensional semiconductor transistors, the electrodes are attached on the top of the layer which normally results in the Schottky contacts. Thus, the device community assumes that the current flow is limited by the source-contact in the subthreshold region, while the channel limits the current in the saturation region. Here, we show that the channel limits the overall current in the subthreshold region and vice versa, in contrast to past studies. Furthermore, we demonstrate how this renewed understanding helps to clarify the general underestimation of extracted SB height in experimental long-channel two-dimensional transistors.