[25a-E104-1~10] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[25a-E104-3] Reactive dry etching characteristics of p-GaN surface

〇Shintaro Toda¹, Tatsuhiro Nozue¹, Norio Kanzaki², Kazutsune Miyanaga², Masahiro Terashima³, Shin-ichi Iida³, Yasufumi Fujiwara² (1.ULVAC Inc., 2.Osaka Univ., 3.ULVAC-PHI Inc.)

Keywords:p-Gan, reactive dry etching

In reactive dry etching of p-type gallium nitride (p-GaN), there is a problem that the degradation of electrical characteristic due to the introduction of damage to the surface. In this study, we found a method to reduce damage by 2-step low-bias etching treatment. In addition, the band structure of the p-GaN surface before and after etching was evaluated by ultraviolet photoelectron spectroscopy (UPS) and low-energy inverse photoelectron spectroscopy (LEIPS), and the origin of characteristic degradation due to damage was considered.