[25a-E104-1~10] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[25a-E104-5] Control of stoichiometric ratio of AlGaN by cyclic supply of Ar/F₂ plasma and BCl₃ gas

〇Shohei Nakamura^1,2, Atsushi Tanide^1,2, Takahiro Kimura¹, Soichi Nadahara^1,2, Kenji Ishikawa², Osamu Oda², Masaru Hori² (1.SCREEN Holdings Co., Ltd., 2.Nagoya Univ.)

Keywords:Atomic layer etching

In GaN devices, it is desired to etch the AlGaN below the gate in atomic layer order with maintaining the composition ratio. In conventional ALE, the Al/(Al+Ga) composition ratio of the AlGaN surface is reduced after etching. In this study, Al and Ga volatility was controlled by alternating the supply of F₂ added Ar plasma and BCl₃ gas, and the Al/(Al+Ga) composition ratio was maintained at the same level as before etching.