[25a-E104-1~10] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

△ [25a-E104-9] Measurement of angular distribution by imaging method of high-speed particles incident on an electrode from a dual-frequency capacitively-coupled plasma

〇Keita Ichikawa¹, Haruka Suzuki¹, Hirotaka Toyoda^1,2 (1.Nagoya Univ., 2.NIFS)

Keywords:semiconductor, etching, angular distribution

The incident angle distribution of high-energy particles from the plasma to the substrate is one of the most important parameters to determine the etching accuracy, but there are few reports. In this study, the incident angle distribution of high-energy particles was measured by imaging the particle spreading through an orifice in the DF-CCP electrode using a micro-channel plate (MCP).