Development of BGaN radiation detectors using BGaN composition graded layer

Tomoyuki Natsume, Atsuya Miyazawa, Daisuke Nakamura, Kosuke Hayashi, Yusaku Hashimoto, Seiya Kawasaki, Woong Kwon, Genichiro Wakabayashi, Yoshio Honda, Hiroshi Amano, Yoku Inoue, Toru Aoki, Takayuki Nakano

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[25a-E203-1~11] 15.4 III-V-group nitride crystals

Fri. Mar 25, 2022 9:00 AM - 12:00 PM E203 (E203)

Hiroto Sekiguchi(Toyohashi Univ. of Tech.), Momoko Deura(Univ. of Tokyo)

11:00 AM - 11:15 AM

[25a-E203-8] Development of BGaN radiation detectors using BGaN composition graded layer

〇Tomoyuki Natsume¹, Atsuya Miyazawa¹, Daisuke Nakamura¹, Kosuke Hayashi¹, Yusaku Hashimoto¹, Seiya Kawasaki², Woong Kwon², Genichiro Wakabayashi³, Yoshio Honda⁴, Hiroshi Amano⁴, Yoku Inoue¹, Toru Aoki⁵, Takayuki Nakano^1,5 (1.Shizuoka Univ., 2.Nagoya Univ., 3.Kindai Univ., 4.IMaSS, Nagoya Univ., 5.R.I.E. Shizuoka Univ.)

Keywords:GaN, radiation detector, MOVPE