[25a-E301-1~9] CS.9 Code-sharing Session of 13.7 & 15.6

[25a-E301-7] Study of double rhombic single Shockley stacking faults in 4H-SiC epilayers

〇Johji Nishio¹, Chiharu Ota¹, Ryosuke Iijima¹ (1.Toshiba R&D Center)

Keywords:silicon carbide, stacking fault, basal plane dislocation

We have been working on the structural analysis of different shapes of single Shockley stacking faults (1SSFs) in 4H-SiC epilayers. In case 1SSFs expand from perfect screw type basal plane dislocations (BPDs) with Burgers vector of ±(1/3)[11-20], they become right-angle triangles. In this report, 1SSFs expanded from BPDs with different Burgers vectors were experimentally confirmed and structural analysis was carried out.