[The 51st Young Scientist Presentation Award Speech] Growth of high quality Ge layers on Co<sub>2</sub>FeSi and enhancement in room-temperature magnetoresistance ratios for Ge-based vertical spin devices

Atsuya Yamada, Michihiro Yamada, Shinya Yamada, Kentarou Sawano, Kohei Hamaya

Presentation information

Oral presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[25p-D114-1~16] 15.5 Group IV crystals and alloys

Fri. Mar 25, 2022 1:00 PM - 5:15 PM D114 (D114)

Keisuke Arimoto(Univ. of Yamanashi), Katsunori Makihara(Nagoya Univ.)

1:00 PM - 1:15 PM

[25p-D114-1] [The 51st Young Scientist Presentation Award Speech] Growth of high quality Ge layers on Co₂FeSi and enhancement in room-temperature magnetoresistance ratios for Ge-based vertical spin devices

〇Atsuya Yamada¹, Michihiro Yamada², Shinya Yamada^3,1, Kentarou Sawano⁴, Kohei Hamaya^3,1 (1.Osaka Univ., 2.JST-PRESTO., 3.CSRN, Osaka Univ., 4.Tokyo City Univ.)

Keywords:semiconductor spintronics, half metal Heusler alloys, molecular beam epitaxy

Presentation information

[25p-D114-1~16] 15.5 Group IV crystals and alloys

[25p-D114-1] [The 51st Young Scientist Presentation Award Speech] Growth of high quality Ge layers on Co2FeSi and enhancement in room-temperature magnetoresistance ratios for Ge-based vertical spin devices

[25p-D114-1] [The 51st Young Scientist Presentation Award Speech] Growth of high quality Ge layers on Co₂FeSi and enhancement in room-temperature magnetoresistance ratios for Ge-based vertical spin devices