[25p-E104-1~21] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[25p-E104-13] Relationship between deposition precursors and film properties of hydrogenated amorphous carbon deposited
by C₃H₆ / H₂ plasma

Jumpei Kurokawa¹, Tadashi Mitsunari^2,3, 〇Hiroki Kondo³, Takayoshi Tsutsumi³, Makoto Sekine³, Kenji Ishikawa³, Masaru Hori³ (1.Nagoya Univ. Eng., 2.Tokyo Electron Technology Solutions, 3.Nagoya Univ. Center for Low-temperature Plasma Science)

Keywords:Plasma CVD, Amorphous carbon, Etching mask

For etching hard mask application of hydrogenated amorphous carbon (a-C:H) thin films by plasma enhanced chemical vapor deposition (PECVD), improvement of etching resistance and reduction of residual stress are required. In this study, we focused on the hydrogen flow rate ratio in a-C:H deposition using C₃H₆ / H₂ plasma, measured radicals and ions in the gas phase, and investigated their effects on film properties such as hydrogen content, carbon atom bonding state, etching rate, and residual stress.