[25p-E104-1~21] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[25p-E104-2] Low energy ion reactions of SiN plasma-enhanced atomic layer deposition

〇Tomoko Ito¹, Hidekazu Kita¹, Ayuta Suzuki², Munehito Kagaya², Masaaki Matsukuma², Kazuyoshi Matsuzaki², Kazuhiro Karahashi¹, Satoshi Hamaguchi¹ (1.Osaka Univ., 2.Tokyo Electron Technology Solutions Ltd.)

Keywords:lasma-enhanced atomic layer deposition