The 69th JSAP Spring Meeting 2022

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[25p-E203-1~17] 15.4 III-V-group nitride crystals

Fri. Mar 25, 2022 1:30 PM - 6:15 PM E203 (E203)

Tsutomu Araki(Ritsumeikan Univ.), Akihiko Kikuchi(Sophia Univ.), Masato Oda(Wakayama Univ.)

5:30 PM - 5:45 PM

[25p-E203-15] TOF-MS gas phase analysis of NH3 activation by TMGa supply

〇Daisuke Yahara1, Zheng Ye2, Shugo Nitta2, Yoshio Honda2, Hiroshi Amano2,3,4 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.ARC, Nagoya Univ., 4.VBL, Nagoya Univ.)

Keywords:gas phase reaction

V/III is an important parameter in nitride semiconductor MOVPE growth, which has a significant effect on growth rate, composition, morphology, defect formation, and impurity incorporation.
Understanding the reactivity of NH3 in the gas phase will contribute to more accurate experimental growth mechanisms and to the realization of advanced crystal growth techniques based on simulations. In this study, we analyzed the effect of TMGa supply on the activation of NH3. As a result, the catalytic effect of TMGa on NH3 exchange reaction was clarified.