[25p-E204-1~17] 6.2 Carbon-based thin films

△ [25p-E204-3] Low Temperature Operation of 2DHG Diamond FET with Superconducting Source and Drain

〇Chiyuki Wakabayashi¹, Yasuhiro Takahashi¹, Kosuke Ota¹, Naoya Niikura¹, Masakazu Arai¹, Taisuke Kageura^1,2, Yoshihiko Takano², Minoru Tachiki², Shuuichi Ooi², Shunichi Arisawa², Hiroshi Kawarada^1,3 (1.Waseda Univ., 2.NIMS, 3.Zaiken)

Keywords:diamond, Superconductor, FET

Superconducting FETs are composed of superconducting electrodes and semiconductor channels, which can control the superconducting current. Diamond can be used to fabricate hybrid devices of superconductors and semiconductors using a single material, and is considered to be suitable for application to superconducting FETs. Therefore, we evaluate the FET operation in an extremely low temperature environment for FETs with superconducting diamond source drains and hydrogen-terminated diamond 2DHG channels, and examined the feasibility of diamond superconducting FETs.