[25p-E301-1~8] CS.9 Code-sharing Session of 13.7 & 15.6

[25p-E301-5] Nitrogen Doping for SiC Substrate by KrF Excimer Laser
Study of Laser Doping Mechanism (part 3)

〇Kaname Imokawa¹, Ryoichi Nohdomi¹, Yasutsugu Usami¹ (1.Gigaphoton Inc.)

Keywords:laser doping, SiC, diffusion depth

SiC is useful material in terms of high withstand voltage, high temperature operation, and low on resistance operation. On the other hand, high temperature processes such as crystalline recovery and activation improvement are required. Laser diffusion layer formation is also considered to be an effective method as one of the solutions. Continuing from the previous survey, we investigated the number of laser irradiations and the diffusion depth for the purpose of clarifying the diffusion mechanism by laser doping.