[25p-E301-1~8] CS.9 Code-sharing Session of 13.7 & 15.6

[25p-E301-6] Three-dimensional self-heating measurement of SiC Schottky barrier diode using optical-interference contactless thermometry (OICT)

〇Keiya Fujimoto¹, Hiroaki Hanafusa¹, Takuma Sato¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

Keywords:SiC, temperature measurement, failure

While the development of power devices is progressing, the self-heating of devices is becoming more serious. High temperature operation affects the device performance and life, and is a cause of failure. Therefore, temperature measurement during device operation is necessary for improvement of reliability. In this research, we have developed optical-interference contactless thermometry (OICT) imaging, and measured three-dimensional temperature during operation of SiC Schottky barrier diode. Furthermore, we observed the abnormal heating at the time of failure by OICT.