The 69th JSAP Spring Meeting 2022

Presentation information

Oral presentation

13 Semiconductors » 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[25p-E307-1~15] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

Fri. Mar 25, 2022 1:30 PM - 5:30 PM E307 (E307)

Takeshi Momose(Univ. of Tokyo), Osamu Sugiura(千葉工大)

5:15 PM - 5:30 PM

[25p-E307-15] Fabrication and Characterization of Through-X Via (TXV) for Smart Skin Display

〇Shunsuke Arayama1, Yuki Susumago2, Tomo Odasima2, Tadaaki Hoshi1, Hisashi kino3, Tetsu Tanaka2,3, Takafumi fukushima2,3 (1.Eng., Tohoku univ., 2.Eng., Tohoku univ., 3.Bio., Eng., Tohoku univ.)

Keywords:flexible hybrid electronics, TXV

In order to achieve hetero-integration, which is essential for the new FHE, it is necessary to form Through-X Via, which connects the top and bottom of the flexible resin substrate. In this study, we formed TXVs by using fine copper pillar assembly and FOWLP, and evaluated their electrical characteristics. As a result, it was found that the current and voltage of the wiring obtained from the metal thin film on the back side of the PDMS through the two through-hole TXVs embedded in the PDMS had a linear relationship, and an ohmic connection was obtained.