16:00 〜 18:00
▲ [25p-P09-6] Proposal and Characteristic Analysis of Lateral-Electric-Field Electro-Absorption Modulator with Insulation Region by H+ ion implantation
キーワード：Electro-Absorption Modulator, Quantum Dot
A Quantum Dot (QD) laser has superior properties such as low threshold current and high temperature stability, and it is predicted to be a high-performance light source combined with other optical components using quantum dot intermixing (QDI) technology. An electro-absorption modulator (EAM) is an important integrated optical component because of its high-speed operation and compactness, and lateral-electric-field EAM has recently been highlighted for high-speed modulation. In this paper, we present a new lateral-electric-field EAM with an insulation area produced by proton (H+) implantation, which has the benefit of being easier to fabricate than the prior one, and we evaluate its fundamental performance.