[26a-E104-1~11] 15.7 Crystal characterization, impurities and crystal defects

[26a-E104-9] A trial of dislocation density analysis of β-Ga₂O₃ by 3-D numerical analysis

〇Koichi Kakimoto¹, Satoshi Nakano¹, Yongzhao Yao², Isao Takahashi³, Akira Yoshikawa⁴ (1.RIAM, Kyushu Univ., 2.JFCC, 3.C&A Co. Ltd, 4.IMR, Tohoku Univ.)

Keywords:Ga2O3, simulation, dislocation

We carried out 3D calculation of dislocation density. The calculation used HAS model in which activation energy of dislocation wa imposed. The result shows that the distribution of dislocation has 2-folded symmetry due to low symmetry of β-Ga₂O₃.