The 69th JSAP Spring Meeting 2022

Presentation information

Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[26p-E202-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sat. Mar 26, 2022 1:00 PM - 4:45 PM E202 (E202)

Kohei Sasaki(Novel Crystal Technology), Oshima Yuichi(NIMS)

3:30 PM - 3:45 PM

[26p-E202-10] [Highlight]Physical Properties of Molten Ga2O3 Measured with an Electrostatic Levitation Furnace in the International Space Station-KIBO

〇Kenji Yoshida1, Hirohiko Kumagai1, Takayoshi Yamane1, Atsushi Hayashi1, Chihiro Koyama2, Hirohisa Oda2, Tsuyoshi Ito2, Takehiko Ishikawa2 (1.AGC Inc., 2.JAXA)

Keywords:Wide bandgap semiconductor, Ga2O3

微小重力環境である国際宇宙ステーション「きぼう」内の静電浮遊炉を利用し、酸化ガリウムの融液物性値(融液密度、表面張力、粘性係数)の取得に成功した結果について報告を行う。

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