Poster presentation

[23p-P12-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Mar 23, 2022 4:00 PM - 6:00 PM P12 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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4:00 PM - 6:00 PM

[23p-P12-1] Theoretical sturdy for structual stability and miscibility of (Al_xGa_1-x)₂O₃ alloys

〇(M1)Shuri Fujita¹, Toru Akiyama¹, Takahiro Kawamura¹, Tomonori Ito¹ (1.Mie Univ.)

4:00 PM - 6:00 PM

[23p-P12-2] STM observation of Ni-induced structure on beta-Ga₂O₃(-201) surface

〇(B)Ririko Takemoto¹, Arifumi Okada¹, Kohei Kadono¹ (1.Kyoto Inst. Tech.)

4:00 PM - 6:00 PM

[23p-P12-3] P-type a-plene ZnO:N thin films grown by MBE on r-sapphire substrates

〇(M1)Tsunataka Hagiwara¹, Koji Irie¹, Keno Goto¹, Kazuki Hata¹, Tomoki Abe¹, Kunio Ichino¹, Kazuaki Akaiwa¹ (1.Tottori Univ.)

4:00 PM - 6:00 PM

[23p-P12-4] Growth of single-crystaline ZnO layer by sputter epitaxy method(Ⅱ)

〇Ryota Misawa¹, Hyuga Kimura¹, Keisuke Yoshida¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (1.Tokyo Denki UUniv.)

4:00 PM - 6:00 PM

[23p-P12-5] Growth of single-crystalline ZnO layer by sputter epitaxy method(III)

〇Hyuga Kimura¹, Ryota Misawa¹, Keisuke Yoshida¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (1.Tokyo Denki Univ.)

4:00 PM - 6:00 PM

[23p-P12-6] Band engineering of MgX₂O₄ (X = Al, Ga, In) alloys

〇Yuichi Ota¹, Kentaro Kaneko², Takeyoshi Onuma³, Shizuo Fujita² (1.TIRI, 2.Kyoto Univ., 3.Kogakuin Univ.)

4:00 PM - 6:00 PM

[23p-P12-7] Origin of hole generation in p-type N-doped SnO_x

〇Kotaro Watanabe¹, Takuma Kawaguchi¹, Yukiya Ichinoseki¹, Shinya Aikawa¹ (1.Kogakuin Univ.)

4:00 PM - 6:00 PM

[23p-P12-8] Effect of partial nitridation of sputtered and annealed SnO_x thin films in nitrogen atmosphere

〇(B)Takuma Kawaguchi¹, Kotaro Watanabe¹, Yukiya Ichinoseki¹, Shinya Aikawa¹ (1.Kogakuin Univ.)

4:00 PM - 6:00 PM

[23p-P12-9] CYTOP passivation on SnOx film toward improvement of hole mobility

〇Yuki Kumamoto¹, Kotaro Watanabe¹, Shinya Aikawa¹ (1.Kogakuin Univ.)

4:00 PM - 6:00 PM

[23p-P12-10] Structural, electrical and optical properties of Ta, Nb, Ba and Sb-doped SnO₂ thin films prepared by metal organic decomposition using spin coating

〇Junji Sawahata¹ (1.Nat'l Inst. Tech. Ibaraki Coll.)

4:00 PM - 6:00 PM

[23p-P12-11] Formation of a transparent conductive film with low fluorescence intensity

〇Masataka Shugo¹, Maki Shimizu¹, Yasuto Hijikata¹, Shinya Aikawa², Shun Mori² (1.Saitama Univ., 2.Kogakuin Univ.)

4:00 PM - 6:00 PM

[23p-P12-12] Fabrication of oriented Cu₂O thin films using metal Cu added Cu₂O powder target

〇(M1)Akari Yoshida¹, Ryohei Onitsuka¹, Nodoka Kondo¹, Yasuji Yamada¹, Shuhei Funaki¹, Wenchang Yeh¹ (1.Shimane Univ.)

4:00 PM - 6:00 PM

[23p-P12-13] OES investigation of ZnO molecule in Zn-O₂ mixture plasma for low-resistance TCF

〇Naoyuki Sato¹, Tihomir Cuzovic¹, Kaito Yonemura¹, Reisuke Fujita¹ (1.Ibaraki Univ.)

4:00 PM - 6:00 PM

[23p-P12-14] CO₂ gas sensing using In₂O₃-based TFT

〇Ayumu Nodera¹, Mori Shun¹, Oe Kaito¹, Aikawa Shinya¹ (1.Kogakuin Univ.)

Oral presentation

[25a-E202-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Mar 25, 2022 9:30 AM - 12:00 PM E202 (E202)

Mutsunori Uenuma(奈良先端大)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 9:45 AM

[25a-E202-1] Effects of gamma-ray irradiation on electrical and optical properties of Ga-doped ZnO films

〇Tetsuya Yamamoto^3,4, Catalin Martin¹, Valentin Craciun², Hisao Makino⁴ (1.RCNJ, 2.NILPRP, 3.Kochi Univ. Tech., Res. Inst., 4.Kochi Univ. Tech.)

9:45 AM - 10:00 AM

[25a-E202-2] Hysteresis and UV Light Detection Characteristics of PEDOT:PSS/ZnO Nanorods/GZO Heterojunction Devices

〇Tomoaki Terasako¹, Masakazu Yagi², Tetsuya Yamamoto³ (1.Ehime Univ., 2.Natl. Inst. Technol., Kagawa Coll., 3.Res. Inst., Kochi Univ. Technol.)

10:00 AM - 10:15 AM

[25a-E202-3] Mg doping effect on the electron affinity of ZnO films

〇Yuto Tsukahara¹, Takuro Dazai¹, Alexis Borowiak², Hideomi Koinuma², Ryota takahashi¹ (1.Nihon Univ., 2.SCT)

10:15 AM - 10:30 AM

▲ [25a-E202-4] Peak shift and Temperature effects in ZnO nanoparticle-based solution-processed LEDs

〇(D)RAJ DEEP¹, Islam Mohammad Shafiqul¹, Akazawa Takuma¹, Toshiyuki Yoshida¹, Yasuhisa Fujita¹ (1.Shimane University)

10:30 AM - 10:45 AM

[25a-E202-5] Fabrication of ZnO nanoparticle dispersed (Ga,Al)₂O₃thin films by mist CVD

〇Tsukasa Yagasaki¹, Toshihiro Nara¹, Keisuke Tanaka¹, Riki Ito¹, Tetsuya Kouno^1,2, Yuuko Kominami^1,2, Kazuhiko Hara^1,2,3 (1.GSIST Shizuoka Univ., 2.GSST Shizuoka Univ., 3.RIE Shizuoka Univ.)

11:00 AM - 11:15 AM

[25a-E202-6] Epitaxial growth of WO₃films and their gas sensing properties

〇Yutaka Adachi¹, Taku Suzuki¹ (1.NIMS)

11:15 AM - 11:30 AM

[25a-E202-7] Effects of Solid-Phase Crystallization Temperature on Electron Transport Properties in the In₂O₃:H Thin-Film

〇Yusaku Magari¹, Taiki Kataoka², Mamoru Furuta², Wenchang Yeh¹ (1.Shimane Univ., 2.Kochi Univ. of Tech.)

11:30 AM - 11:45 AM

[25a-E202-8] Electric Field Thermopower Modulation Analyses of Effective Channel Thickness for InGaO₃(ZnO)_m Thin Film Transistors

〇Takashi Fujimoto¹, Ohta Hiromiti² (1.Hokkaido Univ., 2.RIES-Hokkaido Univ.)

11:45 AM - 12:00 PM

[25a-E202-9] Electrical Properties and Parameter Analysis of LaZrO/InO Electric Double Layer Transistors

〇Hiromi Nakazawa¹, Hiroshi Ishii¹, Yuzuru Takamura² (1.Mitsubishi Materials, 2.JAIST)

Oral presentation

[25p-E202-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Mar 25, 2022 1:30 PM - 5:30 PM E202 (E202)

Rie Togashi(Sophia Univ.), Magari Yusaku(Simane Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

▼ [25p-E202-1] Off-current reduction of InSnZnO_x thin film transistors by Ga-addition

〇(D)Hui Yang^1,2, Xiqing Zhang¹ (1.Beijing Jiaotong Univ., 2.RIES-Hokkaido Univ.)

1:45 PM - 2:00 PM

△ [25p-E202-2] Development of solution-processed electrode by positive direct patterning

〇Shuhei Tanaka¹, Masashi Miyakawa¹, Hiroshi Tsuji¹, Tatsuya Takei¹, Mitsuru Nakata¹ (1.NHK Sci.& Tech. Res. Labs.)

2:00 PM - 2:15 PM

△ [25p-E202-3] Fabrication of ITZO-TFT-Based Active-Pixel-Sensor Pixel Arrays for Image Sensors

〇Koki Imamura¹, Toshikatsu Sakai¹, Hidenori Yakushiji², Yuta Hashimoto², Tatsuya Aotake², Yuichi Sadamitsu², Hiroto Sato¹, Satoshi Aihara¹ (1.NHK STRL, 2.Nippon Kayaku)

2:15 PM - 2:30 PM

▼ [25p-E202-4] Low-temperature activation mechanism in Hydrogen-doped In-Ga-Zn-O films for flexible device applications

〇(PC)Rostislav Velichko¹, Yusaku Magari², Mamoru Furuta¹ (1.Kochi Univ. of Tech., 2.Shimane Univ.)

2:30 PM - 2:45 PM

▼ [25p-E202-5] Study of bottom-gate top-contact source-gated transistor for performance enhancement through device simulation

〇(D)Pongsakorn Sihapitak¹, Juan Paolo Soria Bermundo¹, Yukiharu Uraoka¹ (1.NAIST)

2:45 PM - 3:00 PM

▼ [25p-E202-6] Fermi Level Prediction of Solution-processed Ultra-wide Bandgap Amorphous Gallium Oxide via Supervised Machine Learning Models

〇(D)Diki Purnawati¹, Paul Rossener Regonia¹, Juan Paolo Bermundo¹, Kazushi Ikeda¹, Yukiharu Uraoka¹ (1.Nara Institute of Science and Technology)

3:00 PM - 3:15 PM

▼ [25p-E202-7] Effect of Aging Time and Fuel Content in Silicon-Tin-Oxide Thin Films Fabricated by Solution Combustion Synthesis

〇(D)CandellGrace Paredes Quino¹, Juan Paolo Bermundo¹, Mutsunori Uenuma¹, Yukiharu Uraoka¹ (1.NAIST)

3:30 PM - 3:45 PM

△ [25p-E202-8] Fabrication of highly-oriented β-Ga₂O₃ thin films on polymers by UV laser annealing

〇(M1)Ryoya Kai¹, Kazuki Watanabe¹, Tomoaki Oga¹, Satoru Kaneko^2,1, Akifumi Matsuda¹, Mamoru Yoshimoto¹ (1.Tokyo Tech, 2.KISTEC)

3:45 PM - 4:00 PM

△ [25p-E202-9] Epitaxial growth of ZnO thin films on polymer substrates using β-Ga₂O₃ single crystal cleaved seed layers

〇(D)Tomoaki Oga¹, Hisashi Miyazaki², Satoru Kaneko^3,1, Akifumi Matsuda¹, Mamoru Yoshimoto¹ (1.Tokyo Tech, 2.NDA MSE, 3.KISTEC)

4:00 PM - 4:15 PM

▼ [25p-E202-10] Line-Shaped Surface Defect−Origin of Reverse Leakage Current in HVPE (001) β-Ga2O3 SBDs Identified by High Sensitive Emission Microscope

〇(D)Sayleap Sdoeung¹, Islam Chaman¹, Satoshi Masuya², Kohei Sasaki², Akito Kuramata², Makoto Kasu¹ (1.Saga Univ., 2.Novel Crystal Technology)

4:15 PM - 4:30 PM

△ [25p-E202-11] Three-Dimensional Feature of Nanopipes in EFG-Grown (010) β-Ga₂O₃ Crystal

〇Tomoka Nishikawa¹, Mayuko Tsukakoshi¹, Ken Goto², Hisashi Murakami², Yoshinao Kumagai², Masahiro Uemukai¹, Tomoyuki Tanikawa¹, Ryuji Katayama¹ (1.Osaka Univ., 2.TUAT)

4:30 PM - 4:45 PM

△ [25p-E202-12] Carrier transport in α-Ga₂O₃ on m-plane sapphire and effects of dislocations on it

〇(M2)Hitoshi Takane¹, Hirokazu Izumi², Takeru Wakamatsu¹, Katsuhisa Tanaka¹, Kentaro Kaneko¹ (1.Kyoto Univ., 2.Hyogo Pref. Inst. of Tech.)

4:45 PM - 5:00 PM

△ [25p-E202-13] Growth and electrical properties of α-In₂O₃ by Mist CVD using In₂O₃powder or In(acac)₃as source precursor

〇Akito Taguchi¹, Kentaro Kaneko², Shizuo Fujita², Takeyoshi Onuma¹, Tohru Honda¹, Tomohiro Yamaguchi¹ (1.Kogakuin Univ., 2.Kyoto Univ.)

5:00 PM - 5:15 PM

△ [25p-E202-14] The effect of growth temperature on NiO thin films by mist CVD

〇Yoji Ueno¹, Takumi Ikenoue¹, Masao Miyake¹, Tetsuji Hirato¹ (1.Kyoto Univ.)

5:15 PM - 5:30 PM

△ [25p-E202-15] Fabrication of SnO₂-based Deep Ultraviolet Transparent Conducting Thin Films on AlN

〇(M2)Yo Nagashima¹, Yasushi Hirose¹, Masato Tsuchii¹, Michitaka Fukumoto¹, Tetsuya Hasegawa¹ (1.Tokyo Univ.)

Oral presentation

[26a-E202-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sat. Mar 26, 2022 9:00 AM - 11:30 AM E202 (E202)

Takumi Ikenoue(Kyoto Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[26a-E202-1] Conformal deposition of TiO₂ within microcavity holes by mist-CVD from Ti(acac)₄

〇Kojun Yokoyama¹, Faruk Hossain¹, Hajime Shirai¹ (1.Saitama Univ.)

9:15 AM - 9:30 AM

[26a-E202-2] Analyses of Band Alignment in Rocksalt-structured MgZnO/MgO Interface

〇Masaki Matsuda¹, Kotaro Ogawa², Yuichi Ota³, Tomohiro Yamaguchi¹, Kentaro Kaneko⁴, Shizuo Fujita⁴, Tohru Honda¹, Takeyoshi Onuma¹ (1.Kogakuin Univ., 2.ORC Manu., 3.TIRI, 4.Kyoto Univ.)

9:30 AM - 9:45 AM

[26a-E202-3] VUV Emission at Room Temperature of Rocksalt-Structured MgZnO Grown by Mist CVD

〇Kotaro Ogawa^1,2, Wataru Kosaka², Hiroya Kusaka², Izumi Serizawa¹, Kentaro Kaneko³, Tomohiro Yamaguchi², Shizuo Fujita³, Tohru Honda², Takeyoshi Onuma² (1.ORC, 2.Kogakuin Univ., 3.Kyoto Univ.)

9:45 AM - 10:00 AM

[26a-E202-4] Evaluation of Emission Property of Rocksalt-structured MgZnO by Time Resolved Photoluminescence Measurement

〇Wataru Kosaka¹, Kotaro Ogawa^2,1, Kusaka Hiroya¹, Kentaro Kaneko³, Tomohiro Yamaguchi¹, Shima Kohei⁴, Shizuo Fujita³, Tohru Honda¹, ChiChibu Shigefusa⁴, Takeyoshi Onuma¹ (1.Kogakuin Univ., 2.ORC Manufacturing, 3.Kyoto Univ., 4.Tohoku Univ.)

10:15 AM - 10:30 AM

▲ [26a-E202-5] [The 51st Young Scientist Presentation Award Speech] Single-Crystalline La:SrSnO₃ Conductive Sheet with Wide Bandgap of 4.6 eV

〇Mian Wei¹, Lizhikun Gong², Rui Yu², Hiromichi Ohta³, Tsukasa Katayama³ (1.Henan Univ., 2.IST-Hokkaido Univ., 3.RIES-Hokkaido Univ.)

10:30 AM - 10:45 AM

[26a-E202-6] Growth of rutile Ge_xSn_1-xO₂ alloy thin films and their basic properties

〇(M2)Hitoshi Takane¹, Takeru Wakamatsu¹, Katsuhisa Tanaka¹, Takashi Shinohe², Kentaro Kaneko¹ (1.Kyoto Univ., 2.FLOSFIA)

10:45 AM - 11:00 AM

[26a-E202-7] Experiments of Photo Transistor Based on β-Ga₂O₃ / NiO / β-Ga₂O₃ Structure

〇Shinji Nakagomi¹, Eito Urata¹ (1.Ishinomaki Senshu Univ.)

11:00 AM - 11:15 AM

[26a-E202-8] Relationship between the deposition conditions and composition ratios in the fine channel mist CVD method for α-(Al_xGa_1-x)₂O₃

〇(B)Hiromu Susami¹, Tatsuya Yasuoka¹, Li Liu², T. Giang Dang², Toshiyuki Kawaharamura^1,2 (1.Kochi Univ. of Tech, 2.Res. Inst.)

11:15 AM - 11:30 AM

[26a-E202-9] Study on the fabrication and insulation characteristics of AlOx thin film by Mist CVD

〇Miyabi Fukue¹, Tatsuya Yasuoka¹, Yuna Ishikawa¹, Kanta Asako¹, Li Liu³, Akitaka Itou^2,3, Toshinobu Fujimura⁴, Toshiyuki Kawaharamura^1,3 (1.Sys. Eng., 2.Env. Sci & Eng., 3.Res. Inst, 4.NOF Corp.)

Oral presentation

[26p-E202-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sat. Mar 26, 2022 1:00 PM - 4:45 PM E202 (E202)

Kohei Sasaki(Novel Crystal Technology), Oshima Yuichi(NIMS)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

[26p-E202-1] Effect of HCl support on the α-Ga₂O₃ thin films fabrication

〇Tatsuya Yasuoka¹, Li Liu², Giang T. Dang², Toshiyuki Kawaharamura^1,2 (1.Kochi Univ. of Tech., 2.Res. Inst.)

1:15 PM - 1:30 PM

[26p-E202-2] Development of crucible-free b-Ga₂O₃ crystal growth based on skull melting method

〇Isao Takahashi¹, Taketoshi Tomida¹, Takamasa Sugawara², Yasuhiro Shoji¹, Kochurikhin Vladimir¹, Kei Kamada^1,2, Koichi Kakimoto^2,3, Akira Yoshikawa^1,2 (1.C & A corp., 2.Tohoku univ., 3.Kyushu univ.)

1:30 PM - 1:45 PM

[26p-E202-3] Thermodynamic study of Ga₂O₃ growth using Ga₂O and H₂O source gases

〇Rie Togashi¹, Akari Suzuki¹, Haruka Ishida¹, Shigeyoshi Usami², Masayuki Imanishi², Masahiko Hata³, Yusuke Mori² (1.Sophia Univ., 2.Osaka Univ., 3.Itochu Plastics Inc.)

1:45 PM - 2:00 PM

[26p-E202-4] Growth of Beta-Phase Ga₂O₃ Crystals on a Sapphire and Ga₂O₃ Substrates by OVPE Method

〇Masayuki Imanishi¹, Haruya Kobayashi¹, Kanako Okumura¹, Keisuke Hosokawa¹, Shigeyoshi Usami¹, Rie Togashi², Masahiko Hata³, Yusuke Mori¹ (1.Osaka Univ., 2.Sophia Univ., 3.Itochu Plastics Inc.)

2:00 PM - 2:15 PM

[26p-E202-5] Growth of Ga₂O₃ Film on ScAlMgO₄ Substrate by Mist-CVD

〇Ryo Moriya¹, Hitoshi Takane², Shuhei Yamashita¹, Yuto Yamahuji¹, Junjiro Kikawa¹, Makoto Matsukura³, Takahiro Kojima³, Takashi Shinohe⁴, Kentaro Kaneko², Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.Kyoto Univ., 3.OXIDE Co., 4.FLOSFIA Inc.)

2:15 PM - 2:30 PM

[26p-E202-6] Bandgap engineering of α-Ga₂O₃ by lattice strain

〇Takahiro Kawamura¹, Toru Akiyama¹ (1.Mie Univ.)

2:30 PM - 2:45 PM

[26p-E202-7] Investigation of corundum structured oxide semiconductors by first principles calculations for realization of p-type α-Ga₂O₃

〇Atsuto Itsumi¹, Kazuyuki Uno¹ (1.Wakayama Univ.)

2:45 PM - 3:00 PM

▲ [26p-E202-8] Investigation of Conduction Band Offset at n-Si/n-Ga₂O₃ Heterojunction Fabricated by Surface-Activated Bonding

〇Zhenwei Wang¹, Daiki Takatsuki², Jianbo Liang², Takahiro Kitada¹, Naoteru Shigekawa², Masataka Higashiwaki¹ (1.NICT, 2.Osaka City Univ.)

3:15 PM - 3:30 PM

[26p-E202-9] Crystal structure changes during relatively low temperature heat treatment of Ga₂O₃ nanowire

〇(M2)Keishiro Hirota¹, Kohki Mukai¹ (1.Graduate School of Engineering Science, Yokohama National Univ.)

3:30 PM - 3:45 PM

[26p-E202-10] [Highlight]Physical Properties of Molten Ga₂O₃ Measured with an Electrostatic Levitation Furnace in the International Space Station-KIBO

〇Kenji Yoshida¹, Hirohiko Kumagai¹, Takayoshi Yamane¹, Atsushi Hayashi¹, Chihiro Koyama², Hirohisa Oda², Tsuyoshi Ito², Takehiko Ishikawa² (1.AGC Inc., 2.JAXA)

3:45 PM - 4:00 PM

[26p-E202-11] Characterization of physical properties of β-Ga₂O₃ thin films grown on c-plane sapphire substrates by a chemical solution deposition method

〇Masatoshi Koyama¹, Kazuaki Toyoda¹, Ryosuke Ouchi¹, Nobuya Hiroshiba¹, Kazuto Koike¹ (1.Osaka Inst. Tech.)

4:00 PM - 4:15 PM

[26p-E202-12] Dopant concentration evaluation of β-Ga₂O₃ by SCFM

〇Yuuki Uchida¹, Keiichiro Kato², Takumi Masuda², Kohei Sasaki¹, Nobuo Satoh², Hidekazu Yamamoto² (1.Novel Crystal Tech., 2.Chiba Inst. of Tech.)

4:15 PM - 4:30 PM

▲ [26p-E202-13] Determination of Lattice Constants of High-quality Monoclinic β-Ga₂O₃ Single Crystals by Precise X-ray Diffraction Measurements

〇(M2)Muhidul Islam Chaman¹, Sayleap Sdoeung¹, Makoto Kasu¹ (1.SAGA UNIV.)

4:30 PM - 4:45 PM

▲ [26p-E202-14] X-ray Topography Observation of Vertical Bridgman and Edge-Defined Film-fed Growth-Grown (001) Single β-Ga₂O₃Crystals

〇(M2)Muhidul Islam Chaman¹, Keigo Hoshikawa², Sayleap Sdoeung¹, Makoto Kasu¹ (1.SAGA UNIV., 2.SHINSHU UNIV.)

Sessions

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[23p-P12-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[25a-E202-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

▲ [25a-E202-4] Peak shift and Temperature effects in ZnO nanoparticle-based solution-processed LEDs

[25p-E202-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

▼ [25p-E202-1] Off-current reduction of InSnZnOx thin film transistors by Ga-addition

△ [25p-E202-2] Development of solution-processed electrode by positive direct patterning

△ [25p-E202-3] Fabrication of ITZO-TFT-Based Active-Pixel-Sensor Pixel Arrays for Image Sensors

▼ [25p-E202-4] Low-temperature activation mechanism in Hydrogen-doped In-Ga-Zn-O films for flexible device applications

▼ [25p-E202-5] Study of bottom-gate top-contact source-gated transistor for performance enhancement through device simulation

▼ [25p-E202-6] Fermi Level Prediction of Solution-processed Ultra-wide Bandgap Amorphous Gallium Oxide via Supervised Machine Learning Models

▼ [25p-E202-7] Effect of Aging Time and Fuel Content in Silicon-Tin-Oxide Thin Films Fabricated by Solution Combustion Synthesis

△ [25p-E202-8] Fabrication of highly-oriented β-Ga2O3 thin films on polymers by UV laser annealing

△ [25p-E202-9] Epitaxial growth of ZnO thin films on polymer substrates using β-Ga2O3 single crystal cleaved seed layers

▼ [25p-E202-10] Line-Shaped Surface Defect−Origin of Reverse Leakage Current in HVPE (001) β-Ga2O3 SBDs Identified by High Sensitive Emission Microscope

△ [25p-E202-11] Three-Dimensional Feature of Nanopipes in EFG-Grown (010) β-Ga2O3 Crystal

△ [25p-E202-12] Carrier transport in α-Ga2O3 on m-plane sapphire and effects of dislocations on it

△ [25p-E202-13] Growth and electrical properties of α-In2O3 by Mist CVD using In2O3 powder or In(acac)3 as source precursor

△ [25p-E202-14] The effect of growth temperature on NiO thin films by mist CVD

△ [25p-E202-15] Fabrication of SnO2-based Deep Ultraviolet Transparent Conducting Thin Films on AlN

[26a-E202-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

▲ [26a-E202-5] [The 51st Young Scientist Presentation Award Speech] Single-Crystalline La:SrSnO3 Conductive Sheet with Wide Bandgap of 4.6 eV

[26p-E202-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

▲ [26p-E202-8] Investigation of Conduction Band Offset at n-Si/n-Ga2O3 Heterojunction Fabricated by Surface-Activated Bonding

▲ [26p-E202-13] Determination of Lattice Constants of High-quality Monoclinic β-Ga2O3 Single Crystals by Precise X-ray Diffraction Measurements

▲ [26p-E202-14] X-ray Topography Observation of Vertical Bridgman and Edge-Defined Film-fed Growth-Grown (001) Single β-Ga2O3 Crystals

Authenticate

▼ [25p-E202-1] Off-current reduction of InSnZnO_x thin film transistors by Ga-addition

△ [25p-E202-8] Fabrication of highly-oriented β-Ga₂O₃ thin films on polymers by UV laser annealing

△ [25p-E202-9] Epitaxial growth of ZnO thin films on polymer substrates using β-Ga₂O₃ single crystal cleaved seed layers

△ [25p-E202-11] Three-Dimensional Feature of Nanopipes in EFG-Grown (010) β-Ga₂O₃ Crystal

△ [25p-E202-12] Carrier transport in α-Ga₂O₃ on m-plane sapphire and effects of dislocations on it

△ [25p-E202-13] Growth and electrical properties of α-In₂O₃ by Mist CVD using In₂O₃powder or In(acac)₃as source precursor

△ [25p-E202-15] Fabrication of SnO₂-based Deep Ultraviolet Transparent Conducting Thin Films on AlN

▲ [26a-E202-5] [The 51st Young Scientist Presentation Award Speech] Single-Crystalline La:SrSnO₃ Conductive Sheet with Wide Bandgap of 4.6 eV

▲ [26p-E202-8] Investigation of Conduction Band Offset at n-Si/n-Ga₂O₃ Heterojunction Fabricated by Surface-Activated Bonding

▲ [26p-E202-13] Determination of Lattice Constants of High-quality Monoclinic β-Ga₂O₃ Single Crystals by Precise X-ray Diffraction Measurements

▲ [26p-E202-14] X-ray Topography Observation of Vertical Bridgman and Edge-Defined Film-fed Growth-Grown (001) Single β-Ga₂O₃Crystals