[26p-E202-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[26p-E202-2] Development of crucible-free b-Ga₂O₃ crystal growth based on skull melting method

〇Isao Takahashi¹, Taketoshi Tomida¹, Takamasa Sugawara², Yasuhiro Shoji¹, Kochurikhin Vladimir¹, Kei Kamada^1,2, Koichi Kakimoto^2,3, Akira Yoshikawa^1,2 (1.C & A corp., 2.Tohoku univ., 3.Kyushu univ.)

Keywords:gallium oxide, crucible free, crystal growth

We developed a new crucible free technique to grow b-Ga₂O₃ single crystal based on skull melting method. As a result, we succeeded to obtain a nearly 2 inch sized single crystal.