Reduction of dislocation density in Al<sub>0.6</sub>Ga<sub>0.4</sub>N grown on periodic concavo-convex AlN patterns

Eri Matsubara, Tomoya Omori, Kazuki Yamada, Ryota Hasegawa, Ayumu Yabutani, Ryosuke Kondo, Sho Iwayama, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[26p-E203-1~10] 15.4 III-V-group nitride crystals

Sat. Mar 26, 2022 2:15 PM - 5:15 PM E203 (E203)

Motoaki Iwaya(Meijo Univ.), Ryuji Katayama(Osaka Univ.)

2:45 PM - 3:00 PM

△ [26p-E203-2] Reduction of dislocation density in Al_0.6Ga_0.4N grown on periodic concavo-convex AlN patterns

〇(B)Eri Matsubara¹, Tomoya Omori¹, Kazuki Yamada¹, Ryota Hasegawa¹, Ayumu Yabutani¹, Ryosuke Kondo¹, Sho Iwayama^1,2, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Hideto Miyake² (1.Meijo Univ., 2.Mie Univ.)

Keywords:AlGaN, MOVPE

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Presentation information

[26p-E203-1~10] 15.4 III-V-group nitride crystals

△ [26p-E203-2] Reduction of dislocation density in Al0.6Ga0.4N grown on periodic concavo-convex AlN patterns

△ [26p-E203-2] Reduction of dislocation density in Al_0.6Ga_0.4N grown on periodic concavo-convex AlN patterns