The 69th JSAP Spring Meeting 2022

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16 Amorphous and Microcrystalline Materials » 16.3 Bulk, thin-film and other silicon-based solar cells

[26p-F408-1~11] 16.3 Bulk, thin-film and other silicon-based solar cells

Sat. Mar 26, 2022 1:30 PM - 4:30 PM F408 (F408)

Yasuyoshi Kurokawa(Nagoya Univ.), Takuya Matsui(AIST)

4:00 PM - 4:15 PM

[26p-F408-10] Effect of oxygen in Si crystals on RPD-induced defects

〇(DC)Tomohiko Hara1, Iori Oura1, Yoshio Ohshita1 (1.Toyota Technol. Inst.)

Keywords:Reactive plasma deposition, Crystalline Silicon

Reactive plasma deposition process induces the recombination centers into the SiO2/Si structure and the minority carrier lifetime of Si crystal decreases. In this study, we focused on the behavior of oxygen atoms in the Si crystal and investigated the change in the amount of RPD damage due to the annealing of the Si crystal. As a result, the carrier life of the Cz-Si crystal after the RPD process decreased in proportion to the length of the heat treatment time. Based on these data, we will present the oxygen concentration in Si crystals and the effect of annealing conditions on RPD-induced defects formation.