Poster presentation

[24p-P10-1~4] 16.3 Bulk, thin-film and other silicon-based solar cells

Thu. Mar 24, 2022 4:00 PM - 6:00 PM P10 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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4:00 PM - 6:00 PM

[24p-P10-1] Potential-Induced Degradation of p-type Crystalline Si Cell Modules with a SiN_x Film Formed by Cat-CVD

〇Ryoichi Ishikawa¹, Toshiki Itasaka¹, Huynh Thi Cam Tu¹, Tomihisa Tachibana², Keisuke Ohdaira¹ (1.JAIST, 2.AIST)

4:00 PM - 6:00 PM

▲ [24p-P10-2] Contact resistance between PH₃ plasma-ion-implanted p-type amorphous silicon and ITO at various flash lamp annealing conditions

〇(M2)Ukei Riyuu¹, Huynh Thi Cam Tu¹, Noboru Yamaguchi², Keisuke Ohdaira¹ (1.JAIST, 2.ULVAC Inc.)

4:00 PM - 6:00 PM

[24p-P10-3] Potential-induced degradation of encapsulant-less p-type crystalline Si photovoltaic modules

〇Shuntaro Shimpo¹, Keisuke Ohdaira¹, Huynh Thi Cam Tu¹ (1.JAIST)

4:00 PM - 6:00 PM

▲ [24p-P10-4] Developing highly transparent colored reflectors for building-integrated photovoltaics (BIPV)

〇(PC)Zhihao Xu¹, Takuya Matsui¹, Hitoshi Sai¹ (1.AIST)

Oral presentation

[26a-F408-1~9] 16.3 Bulk, thin-film and other silicon-based solar cells

Sat. Mar 26, 2022 9:30 AM - 12:00 PM F408 (F408)

Tomihisa Tachibana(AIST), Taeko Semba(Niigata University )

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 9:45 AM

[26a-F408-1] Fabrication and evaluation of flexible module with crystalline silicon solar cell

〇Tomihisa Tachibana¹, Katsuto Tanahashi¹, Yuji Ino¹, Katsuhiko Shirasawa¹ (1.AIST)

9:45 AM - 10:00 AM

[26a-F408-2] Na-invasion-type potential-induced degradation of n-type front-emitter crystalline silicon photovoltaic modules and its recovery

〇Keisuke Ohdaira¹, Yutaka Komatsu¹, Seira Yamaguchi^1,2, Atsushi Masuda³ (1.JAIST, 2.Univ. of Tsukuba, 3.Niigata Univ.)

10:00 AM - 10:15 AM

[26a-F408-3] Annual Trends of Indoor Output Measurement Results of High-Efficiency Crystalline Silicon Photovoltaic Modules Exposed Outdoors in Tosu City (II)

〇Yasuo Chiba¹, Ritsuko Sato¹, Sungwoo Choi¹, Minoru Akitomi¹, Tetsuyuki Ishii², Atsushi Masuda³ (1.AIST, 2.CRIEPI, 3.Niigata Univ.)

10:15 AM - 10:30 AM

[26a-F408-4] Damp-heat and thermal cycling alternative test on crystalline Si photovoltaic modules without encapsulant

〇(M1)Nobuhito Imajo¹, Keisuke Ohdaira², Atsushi Masuda¹ (1.Niigata Univ., 2.JAIST)

10:30 AM - 10:45 AM

[26a-F408-5] Study of operating temperature suppression effect by MgO/ SiOx layer on novel modulestructure of crystal silicon solar cell

〇Yasushi Sobajima¹, Kengo Shimizu¹, Keisuke Ohdaira² (1.Gifu Univ., 2.JAIST)

11:00 AM - 11:15 AM

[26a-F408-6] Annealing after ion implantation for nm-scale dopant region for resonant light absorption

〇Isamu Jonoshita

11:15 AM - 11:30 AM

[26a-F408-7] Growth of artificial asymmetric grain boundaries with controlled grain boundary structures and their impact on carrier recombination velocity

Yusuke Fukuda¹, 〇Kentaro Kutsukake², Takuto Kojima³, Yutaka Ohno⁴, Noritaka Usami¹ (1.Grad. Eng., Nagoya Univ., 2.AIP, RIKEN, 3.Grad. Info., Nagoya Univ., 4.IMR, Tohoku Univ.)

11:30 AM - 11:45 AM

[26a-F408-8] Silicon nanopyramid texture fabricated by one-step solution process and its application to silicon heterojunction solar cells

〇(D)Yuqing Li^1,2, Hotoshi Sai¹, Takuya Matsui¹, Noritaka Usami² (1.(GZR), AIST, 2.Nagoya Univ)

11:45 AM - 12:00 PM

[26a-F408-9] Investigation of Light-Induced Degradation in Ga-Doped Cz-Silicon PERC cells

〇Yuji Ino¹, Yuta Irie², Shunsuke Heito², Norikazu Itou², Kouichirou Niira², Katsuhiko Shirasawa¹, Hidetaka Takato¹ (1.AIST, 2.Kyocera Corp.)

Oral presentation

[26p-F408-1~11] 16.3 Bulk, thin-film and other silicon-based solar cells

Sat. Mar 26, 2022 1:30 PM - 4:30 PM F408 (F408)

Yasuyoshi Kurokawa(Nagoya Univ.), Takuya Matsui(AIST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[26p-F408-1] Heterojunction Ge Solar Cells with an Efficiency of 8.6%

〇Makoto Konagai¹, Kimihiko Saito², Kazuyoshi Nakata¹, Yukimi Ichikawa¹, Naoki Suyama¹, Ryousuke Ishikawa¹ (1.Tokyo City Univ., 2.Fukushima Univ.)

1:45 PM - 2:00 PM

[26p-F408-2] Interface Control for High Efficiency Ge Heterojunction Solar Cells

〇Kimihiko Saito¹, Kazuyoshi Nakada², Ryosuke Ishikawa², Naoki Suyama², Makoto Konagai² (1.Fukushima Univ., 2.Tokyo City Univ.)

2:00 PM - 2:15 PM

[26p-F408-3] TEM Analysis of the Junction Interface of Ge Heterojunction Solar Cells

〇Naoki Suyama¹, Kimihiko Saito², Kazuyoshi Nakada¹, Ryousuke Ishikawa¹, Makoto Konagai¹ (1.Tokyo City Univ., 2.Fukushima Univ.)

2:15 PM - 2:30 PM

[26p-F408-4] Investigation of Low Cost Al-doped ZnO Film Deposition Conditions for Tandem Solar Cells

〇Tappei Nishihara¹, Hyunju Lee^1,2, Yoshio Ohshita³, Atsushi Ogura^1,2 (1.Meiji Univ., 2.MREL, 3.Toyota Tech. Inst.)

2:30 PM - 2:45 PM

△ [26p-F408-5] Investigation of the IWO Film Deposition Conditions for the Bottom Cell in Tandem Solar Cells

〇SHIYU ZHANG¹, Tappei Nishihara¹, Hyunju Lee^1,3, Yoshio Ohshita², Atsushi Ogura^1,3 (1.Meiji University, 2.Toyota Tech. Inst., 3.Meiji Renewable Energy Institute)

3:00 PM - 3:15 PM

△ [26p-F408-6] Surface passivation on Si surfaces by Al-doped ultrathin SiO_x formed by wet process

〇(D)Hiroki Nakajima¹, Huynh Thi Cam Tu¹, Keisuke Ohdaira¹ (1.JAIST)

3:15 PM - 3:30 PM

[26p-F408-7] Formation of passivating contacts with directly-nitridated ultra-thin silicon nitride

〇Yuli Wen¹, Thi Cam Tu Huynh¹, Keisuke Ohdaira¹ (1.JAIST)

3:30 PM - 3:45 PM

[26p-F408-8] Variation of the Properties of Cat-CVD SiN_x Films by Fire-through process

〇Toshiki Itasaka¹, Tomihisa Tachibana², Thi Cam Huynh Tu¹, Keisuke Ohdaira¹ (1.JAIST, 2.AIST)

3:45 PM - 4:00 PM

[26p-F408-9] Improvement of electrical properties of crystalline silicon heterostructures using titanium nitride/titanium oxide stacked films

〇Tetsuya Inoue¹, Kazuhiro Gotoh¹, Yasuyoshi Kurokawa¹, Noritaka Usami¹ (1.Graduate School of Eng., Nagoya Univ.)

4:00 PM - 4:15 PM

[26p-F408-10] Effect of oxygen in Si crystals on RPD-induced defects

〇(DC)Tomohiko Hara¹, Iori Oura¹, Yoshio Ohshita¹ (1.Toyota Technol. Inst.)

4:15 PM - 4:30 PM

[26p-F408-11] Evaluation of oxide layer in fluorine-implanted poly-Si/SiO₂/Si structure

〇Katsuto Tanahashi¹, Tomihisa Tachibana¹, Hidetaka Takato¹ (1.AIST)

Sessions

16 Amorphous and Microcrystalline Materials » 16.3 Bulk, thin-film and other silicon-based solar cells

[24p-P10-1~4] 16.3 Bulk, thin-film and other silicon-based solar cells

[24p-P10-1] Potential-Induced Degradation of p-type Crystalline Si Cell Modules with a SiN_x Film Formed by Cat-CVD

▲ [24p-P10-2] Contact resistance between PH₃ plasma-ion-implanted p-type amorphous silicon and ITO at various flash lamp annealing conditions

[24p-P10-3] Potential-induced degradation of encapsulant-less p-type crystalline Si photovoltaic modules

▲ [24p-P10-4] Developing highly transparent colored reflectors for building-integrated photovoltaics (BIPV)

[26a-F408-1~9] 16.3 Bulk, thin-film and other silicon-based solar cells

[26a-F408-1] Fabrication and evaluation of flexible module with crystalline silicon solar cell

[26a-F408-2] Na-invasion-type potential-induced degradation of n-type front-emitter crystalline silicon photovoltaic modules and its recovery

[26a-F408-3] Annual Trends of Indoor Output Measurement Results of High-Efficiency Crystalline Silicon Photovoltaic Modules Exposed Outdoors in Tosu City (II)

[26a-F408-4] Damp-heat and thermal cycling alternative test on crystalline Si photovoltaic modules without encapsulant

[26a-F408-5] Study of operating temperature suppression effect by MgO/ SiOx layer on novel modulestructure of crystal silicon solar cell

[26a-F408-6] Annealing after ion implantation for nm-scale dopant region for resonant light absorption

[26a-F408-7] Growth of artificial asymmetric grain boundaries with controlled grain boundary structures and their impact on carrier recombination velocity

[26a-F408-8] Silicon nanopyramid texture fabricated by one-step solution process and its application to silicon heterojunction solar cells

[26a-F408-9] Investigation of Light-Induced Degradation in Ga-Doped Cz-Silicon PERC cells

[26p-F408-1~11] 16.3 Bulk, thin-film and other silicon-based solar cells

[26p-F408-1] Heterojunction Ge Solar Cells with an Efficiency of 8.6%

[26p-F408-2] Interface Control for High Efficiency Ge Heterojunction Solar Cells

[26p-F408-3] TEM Analysis of the Junction Interface of Ge Heterojunction Solar Cells

[26p-F408-4] Investigation of Low Cost Al-doped ZnO Film Deposition Conditions for Tandem Solar Cells

△ [26p-F408-5] Investigation of the IWO Film Deposition Conditions for the Bottom Cell in Tandem Solar Cells

△ [26p-F408-6] Surface passivation on Si surfaces by Al-doped ultrathin SiO_x formed by wet process

[26p-F408-7] Formation of passivating contacts with directly-nitridated ultra-thin silicon nitride

[26p-F408-8] Variation of the Properties of Cat-CVD SiN_x Films by Fire-through process

[26p-F408-9] Improvement of electrical properties of crystalline silicon heterostructures using titanium nitride/titanium oxide stacked films

[26p-F408-10] Effect of oxygen in Si crystals on RPD-induced defects

[26p-F408-11] Evaluation of oxide layer in fluorine-implanted poly-Si/SiO₂/Si structure

Authenticate

Sessions

16 Amorphous and Microcrystalline Materials » 16.3 Bulk, thin-film and other silicon-based solar cells

[24p-P10-1~4] 16.3 Bulk, thin-film and other silicon-based solar cells

▲ [24p-P10-2] Contact resistance between PH3 plasma-ion-implanted p-type amorphous silicon and ITO at various flash lamp annealing conditions

▲ [24p-P10-4] Developing highly transparent colored reflectors for building-integrated photovoltaics (BIPV)

[26a-F408-1~9] 16.3 Bulk, thin-film and other silicon-based solar cells

[26p-F408-1~11] 16.3 Bulk, thin-film and other silicon-based solar cells

△ [26p-F408-5] Investigation of the IWO Film Deposition Conditions for the Bottom Cell in Tandem Solar Cells

△ [26p-F408-6] Surface passivation on Si surfaces by Al-doped ultrathin SiOx formed by wet process

Authenticate

▲ [24p-P10-2] Contact resistance between PH₃ plasma-ion-implanted p-type amorphous silicon and ITO at various flash lamp annealing conditions

△ [26p-F408-6] Surface passivation on Si surfaces by Al-doped ultrathin SiO_x formed by wet process