Pavel Sergeyevich Kirilenko

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Speaker, Author, Co-Author

Wed. Mar 15, 2023 1:00 PM - 6:00 PM B401 (Building No. 2)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[15p-B401-1~18] 15.4 III-V-group nitride crystals

1:45 PM - 2:00 PM

▲ [15p-B401-4] Improvement of InGaN-based LEDs efficiency by current-blocking region realized via hydrogen passivation

〇(DC)Pavel Sergeyevich Kirilenko¹, Cesur Altinkaya¹, Daisuke Iida¹, Kazuhiro Ohkawa¹ (1.King Abdullah Univ. of Science and Technology)

2:00 PM - 2:15 PM

▲ [15p-B401-5] High crystallinity N-polar InGaN layers grown on ScAlMgO4 substrates cleaved along its c-plane

〇(DC)Pavel Sergeyevich Kirilenko¹, Mohammed Najmi¹, Bei Ma², Artem Shushanian¹, Martin Velazquez-Rizo¹, Daisuke Iida¹, Kazuhiro Ohkawa¹ (1.King Abdullah Univ. of Science and Technology, 2.Chiba Univ.)

2:15 PM - 2:30 PM

▼ [15p-B401-6] Fabrication of low-forward voltage red InGaN LEDs

〇(DC)Pavel Sergeyevich Kirilenko¹, Daisuke Iida¹, Kazuhiro Ohkawa¹ (1.King Abdullah Univ. of Science and Technology)

▲