Pavel Sergeyevich Kirilenko

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発表者・著者、共著者

2023年3月15日(水) 13:00 〜 18:00 B401 (2号館)

一般セッション(口頭講演)
| 15 結晶工学
| 15.4 III-V族窒化物結晶

[15p-B401-1~18] 15.4 III-V族窒化物結晶

13:45 〜 14:00

▲ [15p-B401-4] Improvement of InGaN-based LEDs efficiency by current-blocking region realized via hydrogen passivation

〇(DC)Pavel Sergeyevich Kirilenko¹、Cesur Altinkaya¹、Daisuke Iida¹、Kazuhiro Ohkawa¹ (1.King Abdullah Univ. of Science and Technology)

14:00 〜 14:15

▲ [15p-B401-5] High crystallinity N-polar InGaN layers grown on ScAlMgO4 substrates cleaved along its c-plane

〇(DC)Pavel Sergeyevich Kirilenko¹、Mohammed Najmi¹、Bei Ma²、Artem Shushanian¹、Martin Velazquez-Rizo¹、Daisuke Iida¹、Kazuhiro Ohkawa¹ (1.King Abdullah Univ. of Science and Technology、2.Chiba Univ.)

14:15 〜 14:30

▼ [15p-B401-6] Fabrication of low-forward voltage red InGaN LEDs

〇(DC)Pavel Sergeyevich Kirilenko¹、Daisuke Iida¹、Kazuhiro Ohkawa¹ (1.King Abdullah Univ. of Science and Technology)

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