Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[16a-E102-1~6] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Mar 16, 2023 10:30 AM - 12:00 PM E102 (Building No. 12)

Masataka Higashiwaki(NICT)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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10:30 AM - 10:45 AM

[16a-E102-1] Homoepitaxial growth of (001) β-Ga₂O₃ thin films by mist CVD

〇Ryo Ueda¹, Hiroyuki Nishinaka¹, Tatsuji Nagaoka², Hiroki Miyake², Masahiro Yoshimoto¹ (1.Kyoto Inst. Tech., 2.MIRISE Technologies Corp.)

10:45 AM - 11:00 AM

[16a-E102-2] High-speed Growth of P-type α-(Ir,Ga)₂O₃ Thin Films Using Bromine Compounds

〇(M2)Eiji Kikuchi^1,2, Taisei Hattori³, Tomoki Otsuka³, Kentaro Kaneko² (1.Grad. Sch. Of Eng., Kyoto Univ., 2.Res. Org. Sci. & Tech., Ritsumeikan Univ., 3.Col. Of Sci. & Eng., Ritsumeikan Univ.)

11:00 AM - 11:15 AM

[16a-E102-3] State of mist droplets in the reactor of mist CVD

〇Keita Kusaka¹, Ryousuke Kaji¹, Toshiyuki Kawaharamura^1,2 (1.Kochi Univ. of Tech., 2.Res. Inst.)

11:15 AM - 11:30 AM

▲ [16a-E102-4] Depth profile of Nb in anatase Ti_1−xNb_xO₂ thin films grown by mist chemical vapor deposition method

〇(D)Han XU¹, Tomohito Sudare^1,4, Yumie Miura^1,4, Ryo Nakayama^1,4, Ryota Shimizu¹, Naoomi Yamada², Kentaro Kaneko³, Taro Hitosugi^1,4 (1.Tokyo Tech., 2.Chubu Univ., 3.Ritsumeikan Univ., 4.Univ. Tokyo)

11:30 AM - 11:45 AM

[16a-E102-5] Investigation on Growth Mechanism in α-In₂O₃ by Mist CVD Using Various In-based Powders as Raw Material

〇Takumi Yamamoto¹, Akito Taguchi¹, Rie Yamada¹, Hiroki Nagai¹, Atsushi Sekiguchi¹, Takeyoshi Onuma¹, Tohru Honda¹, Tomohiro Yamaguchi¹ (1.Kogakuin Univ.)

11:45 AM - 12:00 PM

[16a-E102-6] Reduction of carrier concentration in α-In₂O₃ films grown by Mist CVD and fabrication of MOSFET

〇Akito Taguchi¹, Shinri Yamadera¹, Takumi Yamamoto¹, Yuya Hayashi¹, Mamoru Murayama¹, Kotaro Ogawa¹, Tohru Honda¹, Takeyoshi Onuma¹, Kentaro Kaneko², Shinya Aikawa¹, Shizuo Fujita³, Tomohiro Yamaguchi¹ (1.Kogakuin Univ., 2.Ritsumeikan Univ., 3.Kyoto Univ.)

Session information

[16a-E102-1~6] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[16a-E102-1] Homoepitaxial growth of (001) β-Ga₂O₃ thin films by mist CVD

[16a-E102-2] High-speed Growth of P-type α-(Ir,Ga)₂O₃ Thin Films Using Bromine Compounds

[16a-E102-3] State of mist droplets in the reactor of mist CVD

▲ [16a-E102-4] Depth profile of Nb in anatase Ti_1−xNb_xO₂ thin films grown by mist chemical vapor deposition method

[16a-E102-5] Investigation on Growth Mechanism in α-In₂O₃ by Mist CVD Using Various In-based Powders as Raw Material

[16a-E102-6] Reduction of carrier concentration in α-In₂O₃ films grown by Mist CVD and fabrication of MOSFET

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Session information

[16a-E102-1~6] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[16a-E102-1] Homoepitaxial growth of (001) β-Ga2O3 thin films by mist CVD

[16a-E102-2] High-speed Growth of P-type α-(Ir,Ga)2O3 Thin Films Using Bromine Compounds

[16a-E102-3] State of mist droplets in the reactor of mist CVD

▲ [16a-E102-4] Depth profile of Nb in anatase Ti1−xNbxO2 thin films grown by mist chemical vapor deposition method

[16a-E102-5] Investigation on Growth Mechanism in α-In2O3 by Mist CVD Using Various In-based Powders as Raw Material

[16a-E102-6] Reduction of carrier concentration in α-In2O3 films grown by Mist CVD and fabrication of MOSFET

Authenticate

[16a-E102-1] Homoepitaxial growth of (001) β-Ga₂O₃ thin films by mist CVD

[16a-E102-2] High-speed Growth of P-type α-(Ir,Ga)₂O₃ Thin Films Using Bromine Compounds

▲ [16a-E102-4] Depth profile of Nb in anatase Ti_1−xNb_xO₂ thin films grown by mist chemical vapor deposition method

[16a-E102-5] Investigation on Growth Mechanism in α-In₂O₃ by Mist CVD Using Various In-based Powders as Raw Material

[16a-E102-6] Reduction of carrier concentration in α-In₂O₃ films grown by Mist CVD and fabrication of MOSFET