[15a-A301-1~8] 15.6 Group IV Compound Semiconductors (SiC)

△ [15a-A301-4] Identification of threading mixed dislocations in SiC substrates by polarized light observation

〇Yasutaka Matsubara¹, Kenta Murayama², Shunta Harada¹ (1.Nagoya Univ., 2.Mipox)

Keywords:semiconductor, polarized light observation, dislocation

We tried to identify threading mixed dislocations in SiC substrates by comparing polarized light observation with birefringence image simulation. Because of contrast intensity and shape, we identified threading mixed dislocations which has edge component [1-100] in polarized light observation.