[15a-A301-1~8] 15.6 Group IV Compound Semiconductors (SiC)

[15a-A301-7] Effect of basal plane dislocation structure on 1SSF expansion rate in 4H-SiC

〇Johji Nishio¹, Chiharu Ota¹, Ryosuke Iijima¹ (1.Toshiba R&D Center)

Keywords:silicon carbide, ultra-violet illumination, stacking fault

It is widely known that single Shockley-type stacking faults expnad from basal plane dislocations. Concerning the expansion rate, there has been no experimental comparison reported between 30-degree and 90-degree Si-core partial dislocations (PDs). Only a description that 90-degree Si-core PDs expand faster than 30-degree ones. Currently, we have captured an expanding 90-degree Si-core PD and measured its expansion rate. The ratio between 90-degree and 30-degree Si core PDs was obtained. Moreover, we found BPDs of which expansion rates are very small and their sturucture was examined.