[15a-A301-1~8] 15.6 Group IV Compound Semiconductors (SiC)

[15a-A301-6] Development of 3-channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers using Optical Inspection, Photoluminescence and X-ray Topography

〇Junji Senzaki¹, Junichi Nishino¹, Tsutomu Osanai¹, Hiroshi Yamaguchi¹ (1.AIST)

Keywords:SiC, Defect

Optical inspection and photoluminescence (PL) methods are usually used for defect inspection of SiC epitaxial wafers. When different defect classes show similar morphological features or when contrast is not confirmed in the PL image, the inspection accuracy is degraded due to non-detection/erroneous detection for some defect classes. In order to solve this problem, we developed a 3-channel analysis solution for SiC epitaxial layer defects, which is consisting of optical inspection, PL, and X-ray topography.