[15p-A301-1~13] 15.6 Group IV Compound Semiconductors (SiC)

[15p-A301-12] Properties of 4H-SiC Grown Epitaxially by Multi-Wafer Close-Space Sublimation (MCSS) Method

〇Hiroyuki Nagasawa¹, Yuzuru Narita², Tetsuya Chiba³ (1.CUSIC Inc., 2.Yamagata Univ., 3.DryChemicals co.,ltd.)

Keywords:SiC, Epitaxial Growth, Bulk Growth

In order to obtain large diameter SiC wafers with reduced manufacturing cost, monocrystalline 4H-SiC layer is grown by the Multi-wafer Close-Space Sublimation (MCSS) method. Physical Vapor Transport (PVT) from the source (polycrystalline SiC) substrates to the surface of seed (monocrystalline 4H-SiC) substrates and homo-epitaxial growth of 4H-SiC layers are realized in an atmospheric pressure Ar at 1750°C or higher temperature without any temperature gradient. In this presentation, various properties of 4H-SiC grown by the MCSS method will be revealed.