Oral presentation

[15a-A301-1~8] 15.6 Group IV Compound Semiconductors (SiC)

Wed. Mar 15, 2023 9:30 AM - 11:30 AM A301 (Building No. 6)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 9:45 AM

△ [15a-A301-1] Relationship between Charge States of Silicon Vacancies in 4H-SiC and Doping Concentrations

〇Shengjie Zhang^1,2, Shin-ichiro Sato¹, Koichi Murata³, Masafumi Hanawa³, Shu Motoki^2,1, Qihang Zhang^1,2, Hidekazu Tsuchida³, Yasuto Hijikata², Takeshi Ohshima¹ (1.QST, 2.Saitama Univ., 3.CRIEPI)

9:45 AM - 10:00 AM

△ [15a-A301-2] Formation and Characterization of High Concentration of Nitrogen-Vacancy Complex Defects in 4H-SiC by Electron Beam Irradiation

〇Qihang Zhang^1,2, Shin-ichiro Sato², Koichi Murata³, Masafumi Hanawa³, Shu Motoki^1,2, Shengjie Zhang^1,2, Hidekazu Tsuchida³, Yasuto Hijikata¹, Takeshi Ohshima² (1.Saitama Univ., 2.QST, 3.CRIEPI)

10:00 AM - 10:15 AM

△ [15a-A301-3] Correlation between density of color centers at SiO₂/SiC interfaces and MOS interface properties

〇Takato Nakanuma¹, Kosuke Tahara², Taishi Kimura², Katsuhiro Kutsuki², Takayoshi Shimura¹, Heiji Watanabe¹, Takuma Kobayashi¹ (1.Osaka Univ., 2.Toyota Central R&D Labs. Inc.)

10:15 AM - 10:30 AM

△ [15a-A301-4] Identification of threading mixed dislocations in SiC substrates by polarized light observation

〇Yasutaka Matsubara¹, Kenta Murayama², Shunta Harada¹ (1.Nagoya Univ., 2.Mipox)

10:30 AM - 10:45 AM

[15a-A301-5] 3D observation of dislocations inside SiC using a focused polarized laser

Hisaya Sato¹, Tomohisa Kato², Shunta Harada³, 〇Masashi Kato¹ (1.NITech, 2.AIST, 3.Nagoya Univ.)

10:45 AM - 11:00 AM

[15a-A301-6] Development of 3-channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers using Optical Inspection, Photoluminescence and X-ray Topography

〇Junji Senzaki¹, Junichi Nishino¹, Tsutomu Osanai¹, Hiroshi Yamaguchi¹ (1.AIST)

11:00 AM - 11:15 AM

[15a-A301-7] Effect of basal plane dislocation structure on 1SSF expansion rate in 4H-SiC

〇Johji Nishio¹, Chiharu Ota¹, Ryosuke Iijima¹ (1.Toshiba R&D Center)

11:15 AM - 11:30 AM

△ [15a-A301-8] Studies on Warpage and Basal Plane Dislocation of Thick SiC Epitaxial Wafers with a Diameter of 150 mm

〇Fumihiro Fujie¹, Koichi Murata¹, Tsubasa Shiono², Naoto Ishibashi², Yuichiro Mabushi², Hidekazu Tsuchida¹ (1.CRIEPI, 2.Resonac Corp.)

Oral presentation

[15p-A301-1~13] 15.6 Group IV Compound Semiconductors (SiC)

Wed. Mar 15, 2023 1:00 PM - 4:45 PM A301 (Building No. 6)

Takeshi Mitani(AIST), Hirokuni Asamizu(ローム)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

[15p-A301-1] Survey of Parameters Affecting Pareto Front in SiC Solution Growth Method.

〇Daiki Shimoda¹, Kentaro Kutsukake^2,3, Shunta Harada^1,3, Miho Tagawa^1,3, Toru Ujihara^1,3 (1.Grad. School of Eng. Nagoya Univ., 2.AIP RIKEN, 3.IMaSS Nagoya Univ.)

1:15 PM - 1:30 PM

[15p-A301-2] Effect of viscosity on flow distribution, temperature distribution and growth rate in SiC solution growth

〇Juanheng Li¹, Yifan Dang¹, Masato Ota¹, Kentaro Kutsukake^2,3, Harada Shunta^1,2, Tagawa Miho^1,2, Toru Ujihara^1,2 (1.Grad. Sch. Eng. Nagoya Univ., 2.IMaSS Nagoya Univ., 3.AIP RIKEN)

1:30 PM - 1:45 PM

[15p-A301-3] Analysis of the Step Interaction through Carbon Diffusion Field in SiC Solution Growth

〇(M1)Yuki Nakanishi¹, Kentaro Kutsukake^2,3, Yifan Dang¹, Shunta Harada^1,3, Miho Tagawa^1,3, Toru Ujihara^1,3 (1.Graduate School of Eng. Nagoya Univ., 2.AIP RIKEN, 3.IMaSS Nagoya Univ.)

1:45 PM - 2:00 PM

[15p-A301-4] Effect of macrostep height on formation of solvent inclusion in SiC solution growth

〇Yuma Fukami¹, Zhou Huiqin¹, Takemoto Hisaki¹, Dang Yifan¹, Harada Shunta¹, Tagawa Miho¹, Ujihara Toru¹ (1.Nagoya Univ.)

2:00 PM - 2:15 PM

▼ [15p-A301-5] Analysis of the Effect of Solvent Composition on Suppression of Inclusion in SiC Solution Growth by Phase Field Method

〇HUIQIN ZHOU¹, Yuma Fukami¹, Hisaki Takemoto¹, Yifan Dang¹, Miho Tagawa^1,2, Shunta Harada^1,2, Toru Ujihara^1,2 (1.Grad. Sch. Eng. Nagoya Univ., 2.IMaSS, Nagoya Univ.)

2:15 PM - 2:45 PM

[15p-A301-6] [The 44th Paper Award Speech] Reduction in dislocation densities in 4H-SiC bulk crystal grown at high growth rate
by high-temperature gas-source method

〇Norihiro Hoshino¹, Isaho Kamata¹, Takahiro Kanda², Yuichiro Tokuda², Hironari Kuno², Hidekazu Tsuchida¹ (1.CRIEPI, 2.MIRISE Technologies Corporation)

3:00 PM - 3:15 PM

△ [15p-A301-7] Electrical properties of thermally oxidized n- and p-type layers formed by ion implantation into high-purity semi-insulating SiC substrates

〇Qimin Jin¹, Chansoon Koo¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

3:15 PM - 3:30 PM

△ [15p-A301-8] Intrinsic carrier density in 4H-SiC estimated by utilizing transistor structure

〇Satoshi Asada¹, Koichi Murata¹, Hidekazu Tsuchida¹ (1.CRIEPI)

3:30 PM - 3:45 PM

[15p-A301-9] Study on Four-point probe Measurement of SiC Substrates in Laser Doping

〇Kaname Imokawa¹, Ryoichi Nohdomi¹, Yasutsugu Usami¹, Rei Hobara², Shuji Hasegawa² (1.Gigaphoton Inc., 2.Tokyo Univ.)

3:45 PM - 4:00 PM

[15p-A301-10] Hall evaluation of Si-face 3C/4H-SiC heterojunction

〇Hiroyuki Sazawa¹, Shigeyuki Kuboya¹, Hitoshi Umezawa¹, Tomohisa Kato¹, Yasunori Tanaka¹ (1.AIST ADPERC)

4:00 PM - 4:15 PM

[15p-A301-11] Influence of pulsed applied voltage on voltage-controlled anodization of fluorescent 4H-SiC

〇(B)Taisei Mizuno¹, Keita Kodera¹, Shota Akiyoshi¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Weifang Lu², Yiyu Ou³ (1.Meijo Univ., 2.Xianmen Univ., 3.Technical University of Denmark)

4:15 PM - 4:30 PM

[15p-A301-12] Properties of 4H-SiC Grown Epitaxially by Multi-Wafer Close-Space Sublimation (MCSS) Method

〇Hiroyuki Nagasawa¹, Yuzuru Narita², Tetsuya Chiba³ (1.CUSIC Inc., 2.Yamagata Univ., 3.DryChemicals co.,ltd.)

4:30 PM - 4:45 PM

[15p-A301-13] Influence of TSD density of the substrate on the occurrence of 3C-inclusions for the 4H-SiC on-axis epitaxial layers

〇Keiko Masumoto¹, Kazutoshi Kojima¹, Yasunori Tanaka¹ (1.AIST)

Poster presentation

[16p-PA05-1~3] 15.6 Group IV Compound Semiconductors (SiC)

Thu. Mar 16, 2023 1:30 PM - 3:30 PM PA05 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 3:30 PM

[16p-PA05-1] Fundamental analysis of the effect of excess electrons and holes on the stability of SiC polytypes and stacking faults using first-principles calculations

〇Hiroki Sakakima¹, Satoshi Izumi¹ (1.Univ. of Tokyo)

1:30 PM - 3:30 PM

[16p-PA05-2] Step unbunching phenomenon on 4H-SiC substrate surface

〇(DC)Ryotaro Sakakibara¹, Wataru Norimatsu¹ (1.Nagoya Univ.)

1:30 PM - 3:30 PM

[16p-PA05-3] Development of a new charge transfer interatomic potential for 4H-SiC and application for the contraction of partial BPDs

〇Atsuo Hirano¹, Hiroki Sakakima¹, Asuka Hatano¹, Satoshi Izumi¹ (1.Univ. of Tokyo)

Sessions

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[15a-A301-1~8] 15.6 Group IV Compound Semiconductors (SiC)

△ [15a-A301-1] Relationship between Charge States of Silicon Vacancies in 4H-SiC and Doping Concentrations

△ [15a-A301-2] Formation and Characterization of High Concentration of Nitrogen-Vacancy Complex Defects in 4H-SiC by Electron Beam Irradiation

△ [15a-A301-3] Correlation between density of color centers at SiO₂/SiC interfaces and MOS interface properties

△ [15a-A301-4] Identification of threading mixed dislocations in SiC substrates by polarized light observation

[15a-A301-5] 3D observation of dislocations inside SiC using a focused polarized laser

[15a-A301-6] Development of 3-channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers using Optical Inspection, Photoluminescence and X-ray Topography

[15a-A301-7] Effect of basal plane dislocation structure on 1SSF expansion rate in 4H-SiC

△ [15a-A301-8] Studies on Warpage and Basal Plane Dislocation of Thick SiC Epitaxial Wafers with a Diameter of 150 mm

[15p-A301-1~13] 15.6 Group IV Compound Semiconductors (SiC)

[15p-A301-1] Survey of Parameters Affecting Pareto Front in SiC Solution Growth Method.

[15p-A301-2] Effect of viscosity on flow distribution, temperature distribution and growth rate in SiC solution growth

[15p-A301-3] Analysis of the Step Interaction through Carbon Diffusion Field in SiC Solution Growth

[15p-A301-4] Effect of macrostep height on formation of solvent inclusion in SiC solution growth

▼ [15p-A301-5] Analysis of the Effect of Solvent Composition on Suppression of Inclusion in SiC Solution Growth by Phase Field Method

[15p-A301-6] [The 44th Paper Award Speech] Reduction in dislocation densities in 4H-SiC bulk crystal grown at high growth rate
by high-temperature gas-source method

△ [15p-A301-7] Electrical properties of thermally oxidized n- and p-type layers formed by ion implantation into high-purity semi-insulating SiC substrates

△ [15p-A301-8] Intrinsic carrier density in 4H-SiC estimated by utilizing transistor structure

[15p-A301-9] Study on Four-point probe Measurement of SiC Substrates in Laser Doping

[15p-A301-10] Hall evaluation of Si-face 3C/4H-SiC heterojunction

[15p-A301-11] Influence of pulsed applied voltage on voltage-controlled anodization of fluorescent 4H-SiC

[15p-A301-12] Properties of 4H-SiC Grown Epitaxially by Multi-Wafer Close-Space Sublimation (MCSS) Method

[15p-A301-13] Influence of TSD density of the substrate on the occurrence of 3C-inclusions for the 4H-SiC on-axis epitaxial layers

[16p-PA05-1~3] 15.6 Group IV Compound Semiconductors (SiC)

[16p-PA05-1] Fundamental analysis of the effect of excess electrons and holes on the stability of SiC polytypes and stacking faults using first-principles calculations

[16p-PA05-2] Step unbunching phenomenon on 4H-SiC substrate surface

[16p-PA05-3] Development of a new charge transfer interatomic potential for 4H-SiC and application for the contraction of partial BPDs

Authenticate

Sessions

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[15a-A301-1~8] 15.6 Group IV Compound Semiconductors (SiC)

△ [15a-A301-1] Relationship between Charge States of Silicon Vacancies in 4H-SiC and Doping Concentrations

△ [15a-A301-2] Formation and Characterization of High Concentration of Nitrogen-Vacancy Complex Defects in 4H-SiC by Electron Beam Irradiation

△ [15a-A301-3] Correlation between density of color centers at SiO2/SiC interfaces and MOS interface properties

△ [15a-A301-4] Identification of threading mixed dislocations in SiC substrates by polarized light observation

△ [15a-A301-8] Studies on Warpage and Basal Plane Dislocation of Thick SiC Epitaxial Wafers with a Diameter of 150 mm

[15p-A301-1~13] 15.6 Group IV Compound Semiconductors (SiC)

▼ [15p-A301-5] Analysis of the Effect of Solvent Composition on Suppression of Inclusion in SiC Solution Growth by Phase Field Method

△ [15p-A301-7] Electrical properties of thermally oxidized n- and p-type layers formed by ion implantation into high-purity semi-insulating SiC substrates

△ [15p-A301-8] Intrinsic carrier density in 4H-SiC estimated by utilizing transistor structure

[16p-PA05-1~3] 15.6 Group IV Compound Semiconductors (SiC)

Authenticate

△ [15a-A301-3] Correlation between density of color centers at SiO₂/SiC interfaces and MOS interface properties